Biasing Circuit Timing for Surge-Protected Series Transistors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Advanced semiconductor processes with thinner gate oxide layers are prone to damage from voltage surges or current surges due to their lower voltage withstand capability.
Innovation Solution
A semiconductor device configuration that includes a first and second transistor coupled in series, with specific enable periods and delay periods to prevent voltage surges or overshoots, and an amplifier and biasing circuit design that incorporates these transistors to manage signal waveforms effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the gate oxide layer thickness is reduced to achieve higher component density and computing speed, then productivity and performance are improved, but the voltage withstand capability deteriorates, making the transistor prone to damage from voltage surges or current surges
Solution Approach 1:
The patent applies preliminary action by controlling the turn-on timing of transistors in the I/O circuit before voltage surges can occur. The enable periods are carefully designed to ensure that transistors are already in a controlled state before potential surge conditions arise, preventing damage while maintaining thin oxide layer benefits
Solution Approach 2:
The patent implements feedback mechanisms through the interlocking enable periods of series-connected transistors. The second transistor's enable period is triggered by the first transistor's enable period, creating a feedback-controlled sequence that prevents voltage surges by ensuring proper timing and state transitions in the circuit
2Speed
If transistors are enabled simultaneously to improve response speed, then speed is improved, but voltage surges or current surges occur that can damage the transistor
Solution Approach 1:
The patent segments the enable periods of transistors into distinct, non-overlapping intervals. By dividing the operation into separate enable periods for series-connected transistors, the patent prevents simultaneous switching that would cause voltage surges, while still maintaining fast response through optimized timing sequences
Solution Approach 2:
The patent uses preliminary action by ensuring that one transistor is already enabled and stable before the next transistor in the series is enabled. This sequential preparation prevents harmful voltage surges while maintaining rapid overall response through carefully designed delay and enable period relationships
Data Source
AI summary
The present disclosure provides a semiconductor device. The semiconductor device includes a first transistor and a second transistor. The first transistor is configured to conduct in a first enable period. The second transistor is configured to conduct in a second enable period. The first transistor and the second transistor are coupled in series. The first enable period includes a first delay period, the second enable period and a second delay period that are arranged sequentially.