Bidirectional Blocking Monolithic Heterogeneous Cascode FET
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Solution Overview
Problem
Conventional Cascode-structure field effect transistors lack reverse blocking ability, limiting their application in power electronics due to parasitic inductance from bonding wires in hybrid integration methods, which affects system stability and switching loss.
Innovation Solution
A bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor is developed, featuring a GaN buffer layer, AlGaN barrier layer, and SiN isolation layer with a Schottky contact between the GaN high-electron-mobility transistor's drain electrode and AlGaN barrier layer, enabling reverse blocking capability and eliminating parasitic inductance by integrating Si and GaN on a single chip.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If hybrid integration method with bonding wire is used, then manufacturing flexibility is improved, but parasitic inductance increases causing oscillation and reduced system stability
Solution Approach 1:
The patent merges the Si MOSFET and GaN HEMT onto a single substrate to form a monolithic integrated Cascode structure. This integration eliminates the bonding wire connection between separate chips, thereby removing the parasitic inductance that causes oscillation during fast switching, while maintaining manufacturing feasibility through a unified fabrication process.
2Ease of operation
If conventional Cascode structure is used, then forward blocking capability is achieved, but reverse blocking ability is lost limiting power electronics application
Solution Approach 1:
The patent applies local quality by creating asymmetric doping profiles in specific regions of the Cascode structure. The n-type doping concentration in the drift region is optimized to provide both forward blocking capability through the MOSFET and reverse blocking capability through the HEMT, allowing the device to function bidirectionally in power electronics applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a Cascode-structure field effect transistor with both forward and reverse blocking characteristics, enhancing system stability and reducing switching loss, thereby expanding its application range in power electronics.
Implementation Method 1
the second drain electrode forms Schottky contact with the AlGaN barrier layer to block the reverse conduction of the GaN high-electron-mobility transistor and realize a reverse blocking characteristic of the Cascode-structure field effect transistor
Data Source
AI summary
A bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor, which mainly solves a problem that the existing monolithic heterogeneous integrated Cascode-structure field effect transistor has no reverse blocking characteristic. The field effect transistor includes a substrate, a GaN buffer layer, an AlGaN barrier layer and a SiN isolation layer, wherein an isolation groove is etched in the middle of the SiN isolation layer, a Si active layer is printed on the SiN isolation layer on one side of the isolation groove so as to prepare a Si metal oxide semiconductor field effect transistor, and a GaN high-electron-mobility transistor is prepared on the other side of the isolation groove, and a drain electrode of the GaN high-electron-mobility transistor is in Schottky contact with the AlGaN barrier layer to form a bidirectional blocking monolithic heterogeneous integrated Cascode-structure field effect transistor.