Bi-directional ESD Structure Using Trigger Networks
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing semiconductor devices face challenges in achieving bi-directional electrostatic discharge (ESD) protection without increasing the size of the ESD structure or complicating the fabrication process, as they need to handle both positive and negative current flows while operating within specified voltage ranges.
Innovation Solution
A bi-directional ESD structure is implemented in semiconductor devices, comprising a main transistor and control transistors electrically coupled between a protected node and a reference node, with trigger networks providing transient on-state signals for both positive and negative electrical pulses, reducing the potential difference effectively using a main NMOS transistor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If back-to-back components are used to achieve bi-directional ESD protection, then the protection capability for both positive and negative current flow is improved, but the area of the ESD structure increases
Solution Approach 1:
The patent combines multiple ESD protection functions into a single integrated structure. The ESD protection circuit includes a first ESD protection component and a second ESD protection component that are coupled together to form a unified bi-directional protection mechanism, eliminating the need for separate back-to-back components and reducing overall area.
Solution Approach 2:
The ESD protection circuit is designed to provide both positive and negative voltage protection through a single structure. The first and second ESD protection components are configured to handle different voltage polarities, enabling the same circuit to perform multiple protection functions simultaneously without requiring additional dedicated components for each direction.
2Area of stationary object
If photolithographic operations are added to achieve bi-directional ESD protection without back-to-back components, then the ESD structure area is reduced, but the fabrication complexity and cost increase
Solution Approach 1:
The ESD protection circuit is divided into distinct functional segments: a first ESD protection component for positive voltage protection and a second ESD protection component for negative voltage protection. These segmented components are coupled together in a systematic manner that maintains functional independence while enabling compact integration using standard fabrication processes.
Data Source
AI summary
A semiconductor device has a protected node and a reference node, and a bi-directional ESD structure electrically coupled between the protected node and the reference node. The bi-directional ESD structure includes a main transistor electrically coupled between the protected node and the reference node, an upper control transistor with current nodes electrically coupled between the protected node and a control node of the main transistor, and a lower control transistor with current nodes electrically coupled between the reference node and a control node of the main transistor. The bi-directional ESD structure also includes an upper trigger network configured to provide a transient on-state signal to the upper control transistor from a positive electrical pulse on the protected node. The bi-directional ESD structure further includes a lower trigger network configured to provide a transient on-state signal to the lower control transistor from a negative electrical pulse on the protected node.