Bidirectional Heat Dissipation in Power Semiconductor Modules
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Solution Overview
Problem
Conventional power semiconductor modules face limitations in heat dissipation due to unidirectional heat dissipation, which restricts the efficiency of thermal management and leads to high thermal resistance.
Innovation Solution
A power semiconductor module design featuring a first heat dissipation substrate with a semiconductor chip bonded in a flip chip configuration, a thermal interface material layer, and a second heat dissipation substrate of various types (flat, pin, or fin) that facilitates bidirectional heat dissipation through a lead plate and a PCB, with copper layers and an adhesive layer composed of nanoparticles for enhanced thermal conductivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If unidirectional heat dissipation structure is used, then device complexity is reduced, but heat dissipation performance deteriorates
Solution Approach 1:
The patent transitions from unidirectional heat dissipation to bidirectional heat dissipation by adding a second heat dissipation substrate above the semiconductor chip. This dimensional change allows heat to escape in two directions (upward and downward), significantly improving thermal management without excessive complexity
Solution Approach 2:
The heat dissipation function is segmented into two independent paths: one through the first heat dissipation substrate below the chip, and another through the second heat dissipation substrate above the chip. This segmentation allows each substrate to be optimized independently while collectively solving the thermal problem
2Temperature
If thermal interface material layer is added, then heat dissipation performance is improved, but device complexity increases
Solution Approach 1:
The thermal interface material layer acts as an intermediary between the semiconductor chip and the heat dissipation substrates. It improves thermal contact and heat transfer efficiency, serving as a mediator that enhances the thermal pathway without requiring fundamental redesign of the existing structure
3Temperature
If flip chip bonding is used, then heat dissipation performance is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent inverts the conventional bonding approach by using flip chip technology where the semiconductor chip is bonded with its active surface facing downward toward the heat dissipation substrate. This inversion allows direct thermal contact between the heat-generating region and the heat dissipation path, improving thermal performance despite higher manufacturing precision requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design significantly improves heat dissipation performance by allowing vertical bidirectional heat dissipation, reducing thermal resistance, and minimizing the module's size, while maintaining electrical connectivity and efficient heat transfer.
Implementation Method 1
a thermal interface material layer (TIM layer) positioned on the semiconductor chip
Implementation Method 2
a second heat dissipation substrate formed on the TIM layer
Implementation Method 3
a power semiconductor module with improved heat dissipation performance
Data Source
AI summary
The present invention relates to a power semiconductor module including a first heat dissipation substrate, a semiconductor chip, a lead plate, a PCB, and a heat dissipation plate that are packaged within a casing, wherein dualization of a heat dissipation structure is applied to facilitate superior heat dissipation performance compared to a conventional power semiconductor module.