Bidirectional HV Switch Circuit With Programmable Resistance Network
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Solution Overview
Problem
Existing high voltage bidirectional power switches (BPS) require large area HV devices and many HV switches for resistance programming/trimming, leading to increased chip area and potential device breakdowns under high voltage/current conditions, and lack bidirectional voltage blocking capability in the OFF state.
Innovation Solution
A high voltage bidirectional power switch (BPS) circuit with a HV block and LV resistance network, using two HV transistors in series with opposing body diode paths and a resistance network of switchable modules, each with a body bias control circuit and gate control circuit to manage biasing and switching, allowing bidirectional current flow and voltage blocking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If large area HV devices and many HV switches are used for resistance programming/trimming, then resistance control capability is improved, but chip area increases and device breakdown risk increases
Solution Approach 1:
The resistance programming function is segmented between LV switches for selection and HV switches for high voltage blocking. The resistance network is divided into multiple modules, each controlled by LV switches, while HV switches provide high voltage protection without requiring large areas for resistance trimming.
Solution Approach 2:
LV switches act as intermediaries between the control logic and the resistance network. These LV switches handle the resistance selection function, allowing precise resistance programming without requiring large area HV switches to perform the same function, thus reducing overall chip area.
2Measurement precision
If large area HV devices are used for resistance programming/trimming, then resistance control capability is improved, but device breakdown risk under high voltage/current conditions increases
Solution Approach 1:
The system segments the functions of resistance control and high voltage blocking into separate switch types. LV switches handle resistance selection with precise control, while HV switches are dedicated to high voltage blocking with appropriate voltage ratings, ensuring neither component operates beyond its designed limits and reducing breakdown risk.
Solution Approach 2:
The invention changes the voltage parameter handling by using LV switches for low voltage resistance control and HV switches for high voltage blocking. This parameter separation ensures that each switch operates within its optimal voltage range, preventing breakdown while maintaining resistance programming precision.
3Reliability
If conventional HV switch configuration is used, then high voltage blocking is achieved, but bidirectional voltage blocking capability in OFF state is lost
Solution Approach 1:
The HV switches are configured with asymmetric body diode orientations to enable bidirectional voltage blocking. By arranging the body diodes in opposite directions, the circuit can block voltages from both polarities when the switches are in the OFF state, providing adaptability for bidirectional applications while maintaining reliable voltage blocking.
Data Source
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AI summary
A high-voltage, HV, bidirectional-power-swich, BPS, circuit comprising: a HV-block coupled to a first-terminal and comprising two HV transistors arranged in series in a BPS configuration; and a resistance-network comprising a plurality of switchable-resistance-modules connected in parallel with each other between the HV-block and a second-terminal, wherein each switchable-resistance-module comprises: a precision-resistor connected in series with a conduction-channel of a resistance-switching-transistor; a first-biasing-resistor connected between a first-conduction-channel-terminal and a control-terminal of the resistance-switching-transistor; a second-biasing-resistor connected between a second-conduction-channel-terminal and the control-terminal of the resistance-switching-transistor; a body-bias-control-circuit configured to control a bias of body diodes of the resistance-switching-transistor; a switchable-sourcing-current-source comprising a first-current-source and a first-source-switch connected in series between a positive-voltage-supply-terminal and the control-terminal; and a switchable-sinking-current-source comprising a second-current-source and a second-source-switch connected in series between a negative-voltage-supply-terminal and the control-terminal, wherein the first-source-switch and the second-source-switch are configured to receive switching-signals to selectively enable or disable the resistance-switching-transistor.