Monolithically integrated bidirectional switch
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Solution Overview
Problem
Current source rectifiers, inverters, and converters face high conduction losses due to the requirement for bidirectional blocking capability with active control of only one blocking direction.
Innovation Solution
A monolithically integrated bidirectional switch is developed, featuring a compound semiconductor substrate with a common drift region and two gates, where one gate is electrically connected to the control terminal and the other to the input terminal, allowing for active control of current flow in a single direction while blocking voltages of both polarities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If bidirectional blocking capability is implemented with active control of only one blocking direction, then device complexity is reduced, but conduction losses increase due to forward diode voltage
Solution Approach 1:
The patent merges two separate drift regions into a single common drift region that serves both blocking directions. This integration eliminates the need for separate controlled switches in each direction, reducing device complexity while enabling active control of current flow to minimize conduction losses through synchronous rectification.
Solution Approach 2:
The common drift region performs multiple functions: it blocks voltages of both polarities and conducts current in the forward direction with low losses when activated by the control terminal. This multi-functional design replaces the need for separate diode and switch structures, addressing both complexity reduction and loss minimization.
2Loss of energy
If a single common drift region is used for both blocking directions, then conduction losses are reduced, but the requirement for active control of current flow increases device complexity
Solution Approach 1:
The device structure itself provides the control mechanism through the control terminal connected to the common drift region. The drift region can be actively controlled to switch between blocking and conducting states, eliminating the need for external complex control circuits while maintaining low conduction losses through synchronous operation.
3Reliability
If forward diode voltage is present in bidirectional blocking devices, then bidirectional blocking capability is achieved, but conduction losses increase
Solution Approach 1:
The patent changes the operational parameter of the drift region from passive diode behavior to active controlled behavior. By applying control voltages to the control terminal, the drift region can be switched to operate in a low-resistance state during forward conduction, effectively changing its electrical parameters to minimize voltage drop and conduction losses while maintaining blocking capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces conduction losses by using a single common drift region for both blocking directions, and allows for efficient active control of current flow, enhancing the performance of bidirectional switching applications.
Implementation Method 1
the monolithically integrated bidirectional switch is configured to block voltages of both polarities and conduct current in a single direction from the input terminal to the output terminal through the common drift region via active control of the first gate
Implementation Method 2
conduct current in a single direction from the input terminal to the output terminal through the common drift region via active control of the first gate
Data Source
AI summary
A monolithically integrated bidirectional switch includes: an input terminal; an output terminal; a control terminal; a compound semiconductor substrate; a common drift region in the compound semiconductor substrate and in series between the input terminal and the output terminal; a first gate; and a second gate. One of the first gate and the second gate is a normally-on gate and the other one of the first gate and the second gate is a normally-off gate, such that the monolithically integrated bidirectional switch is configured to conduct current in a single direction from the input terminal to the output terminal through the common drift region. A corresponding power electronic system that uses the monolithically integrated bidirectional switch is also described.