Bidirectional MOS Switch Gate Drive for Low-Current Turn-On

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Solution Overview

Problem

Existing high-voltage bidirectional switch devices face challenges with high current consumption during turn-on due to parasitic capacitance discharge, complex and costly circuit design, and variable turn-on currents, which affect efficiency and area occupation in charge recovery resonant drivers.

Innovation Solution

A high-voltage bidirectional switch device with a control and driving stage that uses a driving transistor and switching transistor in inverter configuration, driven by specific signals to manage turn-on and turn-off, minimizing parasitic capacitance discharge and optimizing current usage, and avoiding connection to ground during turn-off.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Speed

If conventional current generators are used to charge parasitic capacitance during turn-on, then switching speed is improved, but current consumption becomes excessively high and circuit complexity increases

Engineering Contradiction:
Improveturn-on speedVSAvoidcurrent consumption
Core Design Contradiction:
SpeedVSUse of energy by moving object

Solution Approach 1:

The parasitic capacitance of the bidirectional switch is charged by the current naturally flowing during the turn-on transition itself, rather than by a dedicated current generator. The current that flows during the switching transition is reused to charge the capacitance, eliminating the need for separate high-current generation circuits and reducing overall current consumption while maintaining fast switching speeds

Inventive Principle:
Principle #25Self-service

2Ease of operation

If dedicated current generators are added to manage turn-on current, then switching control is improved, but device complexity and area occupation increase

Engineering Contradiction:
Improveswitching controlVSAvoidcircuit complexity
Core Design Contradiction:
Ease of operationVSDevice complexity

Solution Approach 1:

The dedicated current generator component is extracted and removed from the circuit. Instead of adding complex current generation circuitry, the invention uses the existing current flow during switching transitions to charge the parasitic capacitance, simplifying the overall circuit design while maintaining effective switching control through the natural dynamics of the circuit elements

Inventive Principle:
Principle #2Taking out (Extraction)

3Reliability

If parasitic capacitance is fully discharged during turn-off, then switching completeness is improved, but energy loss increases due to repeated recharging

Engineering Contradiction:
Improveswitching completenessVSAvoidenergy loss
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

Instead of completely discharging the parasitic capacitance to ground during turn-off (which wastes energy), the invention allows the capacitance to retain its charge. The charged capacitance is then recovered and reused during the next turn-on transition, eliminating the need for repeated full charging cycles and reducing energy loss while maintaining reliable switching operation

Inventive Principle:
Principle #34Discarding and recovering

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution reduces current consumption, simplifies circuit design, and minimizes area occupation while maintaining fast turn-on and turn-off times, improving overall efficiency and reducing power consumption in charge recovery resonant drivers.

Implementation Method 1

a driving transistor connected to a supply terminal and driven by a first driving signal to charge an internal gate node and turn on the bidirectional switch

Methodology Applied
Scientific EffectElectrical charge: Electrical Accumulator

Implementation Method 2

a switching transistor driven by a second driving signal to short-circuit the internal gate and source nodes and turn off the bidirectional switch

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 3

a voltage limiting element connected between the internal gate and source nodes

Methodology Applied
Scientific EffectZener breakdown: Avalanche Breakdown

Data Source

PatentUS20240421809A1High-voltage bidirectional switch device with improved electrical characteristics
Publication Date: 2024.12.19 STMICROELECTRONICS INT NV
  • US20240421809A1 patent drawing
  • US20240421809A1 patent drawing
  • US20240421809A1 patent drawing

AI summary

A switch device is described, formed by: a first switch MOS transistor, with its drain terminal connected to a first switch terminal, source terminal connected to an internal source node and gate terminal connected to an internal gate node; a second switch MOS transistor, with its drain terminal connected to a second switch terminal, source terminal connected to the internal source node and gate terminal connected to the internal gate node; and a voltage limiting element connected between the internal gate and source nodes. A driving stage, voltage-referred to the internal source node, drives the switching of the bidirectional switch, as a function a first and a second driving signals, and has a driving transistor and a switching transistor connected to each other in inverter configuration.