Bidirectional Switch Circuit Layout for Compact Reverse-Blocking
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing bidirectional switch circuits are large in area due to the common emitter type circuit connection, which limits miniaturization and increases the risk of reverse withstand voltage breakdown in IGBTs.
Innovation Solution
A bidirectional switch circuit design that connects IGBTs and diodes in antiparallel configuration, with emitter and anode electrodes having the same potential through fine metal wires, eliminating the need for an emitter pattern and allowing for a more compact layout, and using shared emitter drive patterns to further reduce circuit area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a common emitter type circuit connection is used, then the circuit can be configured simply, but the circuit area becomes large
Solution Approach 1:
The patent merges the emitter potential pattern with the collector potential pattern by connecting them at specific points, allowing the two patterns to share common conductive paths and reducing the overall circuit area while maintaining proper electrical isolation where needed
Solution Approach 2:
The patent utilizes the vertical dimension by stacking semiconductor devices and connecting them through vertical conductive paths, allowing the circuit to be configured in three-dimensional space rather than requiring extensive horizontal layout
2Area of stationary object
If the circuit area is reduced, then miniaturization is achieved, but reverse withstand voltage breakdown risk increases
Solution Approach 1:
The patent creates equipotential regions by connecting corresponding electrodes (emitter to anode, collector to cathode) through the wiring structure, ensuring that no potential differences exist between adjacent electrodes of the same potential, thereby eliminating the risk of reverse withstand voltage breakdown
Solution Approach 2:
The patent introduces intermediate connection points and wiring structures that mediate between the semiconductor devices and the external circuit, providing controlled potential transitions and isolation that protect against voltage breakdown while enabling compact layout
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design miniaturizes the circuit, suppresses reverse withstand voltage breakdown, and reduces heat generation by using fine metal wires, leading to increased current density and extended device life.
Implementation Method 1
fine metal wires electrically connecting the first upper surface electrode and the second anode electrode and second wiring electrically connecting the second upper surface electrode and the first anode electrode
Data Source
AI summary
According to the present disclosure, a bidirectional switch circuit includes a first semiconductor device including a first backside electrode electrically connected to a first pattern and a first upper surface electrode, a second semiconductor device including a second backside electrode electrically connected to a second pattern and a second upper surface electrode, a first diode including a first cathode electrode electrically connected to the first pattern and a first anode electrode, a second diode including a second cathode electrode electrically connected to the first pattern and a second anode electrode, first wiring electrically connecting the first upper surface electrode and the second anode electrode and second wiring electrically connecting the second upper surface electrode and the first anode electrode, wherein the first upper surface electrode, the second upper surface electrode, the first anode electrode and the second anode electrode are electrically connected to each other.