Bi-directional Transistor Shield Conductor Breakdown Voltage
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Solution Overview
Problem
Existing bi-directional field effect transistors (FETs) have low switching frequency and low breakdown voltage, with complex manufacturing processes that increase costs.
Innovation Solution
A bi-directional transistor design with lateral current flow and unequal doping profiles for source and drain regions, featuring a shield conductor configuration that enhances breakdown voltage symmetry and reduces channel resistance, facilitating higher operating frequencies and lower manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional bi-directional FET structures are used, then current can flow in both directions, but switching frequency is low and breakdown voltage is low
Solution Approach 1:
The patent applies asymmetry by implementing unequal doping profiles in the source and drain regions. Specifically, one current carrying electrode region has a first doping concentration while the other has a second doping concentration that is different from the first. This asymmetric doping configuration optimizes the transistor for bidirectional operation by balancing the breakdown voltages in both directions while enabling higher switching frequencies.
Solution Approach 2:
The patent applies local quality by creating regions with different doping concentrations at specific locations within the transistor structure. The source and drain regions are doped differently to achieve optimal local electrical characteristics for bidirectional operation, with each region having tailored doping levels to control carrier injection and breakdown characteristics.
2Ease of manufacture
If conventional bi-directional FET structures are used, then current can flow in both directions, but the process flow is complex which increases manufacturing cost
Solution Approach 1:
The patent applies merging by combining multiple functions into a single integrated structure. The transistor is designed with shared regions and combined doping steps that simultaneously achieve bidirectional operation, optimized breakdown voltage characteristics, and reduced manufacturing complexity. The source and drain regions are formed in an integrated process that eliminates separate fabrication steps.
Solution Approach 2:
The patent applies universality by designing a transistor structure that performs multiple functions within a single device architecture. The asymmetrically doped transistor provides bidirectional current flow capability, optimized breakdown voltage in both directions, and high switching frequency operation all within one unified structure, eliminating the need for multiple specialized components.
Data Source
AI summary
In one embodiment, a semiconductor device is formed to include a gate structure extending into a first portion of a semiconductor material that is underlying a first region of semiconductor material. The gate structure separates a portion of the first region into at least a first current carrying electrode region and a second current carrying electrode region. The first portion of the semiconductor material is configured to form a channel region of the transistor which underlies a gate conductor of the gate structure. The gate structure also includes a shield conductor overlying the gate conductor and having a shield insulator positioned between the shield conductor and the gate conductor. The shield insulator also having a second portion positioned between the shield conductor and a second portion of the gate insulator and a third portion overlying the shield conductor.