Bifacial Enhancement Layers for Thin-Film PV Back-Interface Efficiency

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Solution Overview

Problem

Thin film photovoltaic devices face challenges in implementing bifacial efficiency due to limitations in the use of semiconductor materials, particularly in converting albedo reflectance into electrical power, with inefficient back interfaces leading to reduced quantum efficiency.

Innovation Solution

The introduction of bifacial enhancement layers, comprising nanometer-scale particles such as quantum dots or perovskite materials, which absorb albedo reflectance and emit photoluminescence at a longer wavelength, improving the quantum efficiency of thin film photovoltaic devices by interacting with the absorber layer to enhance power conversion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If thin film semiconductor materials are used in photovoltaic devices, then manufacturing complexity is reduced and ease of manufacture is improved, but quantum efficiency at the back interface deteriorates and bifacial performance is limited

Engineering Contradiction:
Improveease of manufactureVSAvoidquantum efficiency
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent introduces an intermediary layer (back interface layer or enhancement layer) between the thin film absorber and the back contact. This intermediary layer acts as a mediator that improves charge carrier extraction and reduces recombination at the back interface, thereby enhancing quantum efficiency without compromising the ease of manufacture of thin film devices. The intermediary layer can be a transparent conductive oxide or a specially designed buffer layer that optimizes the electrical and optical properties at the back interface.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent modifies the physical and chemical parameters of the back interface by controlling the composition, thickness, and crystalline structure of the back interface layer. By adjusting parameters such as the band gap energy, carrier concentration, and surface morphology of the back interface layer, the quantum efficiency is optimized while maintaining the simplicity of thin film fabrication processes.

Inventive Principle:
Principle #35Parameter changes

2Device complexity

If conventional monofacial designs are used, then device complexity is minimized, but power output and energy conversion are limited

Engineering Contradiction:
Improvedevice complexityVSAvoidpower output
Core Design Contradiction:
Device complexityVSPower

Solution Approach 1:

The patent designs the photovoltaic device with multi-functional layers that serve multiple purposes. The back interface layer not only facilitates charge extraction but also enhances light management and improves the device's response to both direct sunlight and albedo reflectance. This multi-functionality allows the device to achieve bifacial performance without significantly increasing overall device complexity.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The patent transitions from a monofacial (single-sided) design to a bifacial (dual-sided) design by adding functional capabilities to the back surface of the device. This dimensional expansion allows the device to capture light from both the front (direct sunlight) and back (albedo reflectance) surfaces, effectively doubling the light-harvesting area without proportionally increasing device complexity.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Ease of manufacture

If thin film absorber layers are used without enhancement, then manufacturing simplicity is maintained, but conversion of albedo reflectance into electrical power is inefficient

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidenergy loss
Core Design Contradiction:
Ease of manufactureVSLoss of energy

Solution Approach 1:

The patent introduces an enhancement layer at the back interface that acts as a mediator to improve the conversion of albedo reflectance into electrical power. This layer optimizes the optical and electrical properties at the back surface, enabling more efficient extraction of charge carriers generated by reflected light while maintaining manufacturing simplicity.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent optimizes the physical and chemical parameters of the back interface layer to maximize energy conversion efficiency. By adjusting the band structure, carrier mobility, and optical absorption characteristics of the enhancement layer, the device minimizes energy losses from albedo reflectance while keeping the manufacturing process simple and scalable.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enhances the bifacial performance of photovoltaic devices by increasing the conversion of albedo reflectance into electrical power, improving quantum efficiency and reducing energy loss, thereby increasing the overall power output without altering the absorber layer composition.

Implementation Method 1

bifacial enhancement layers...absorb albedo reflectance and emit photoluminescence at a longer wavelength

Methodology Applied
Scientific EffectPhotoluminescence: Photoluminescence

Implementation Method 2

A photovoltaic device generates electrical power by converting light into electrical power using semiconductor materials that exhibit the photovoltaic effect

Methodology Applied
Scientific EffectPhotovoltaic effect: Photovoltaic Effect

Data Source

PatentUS20240413254A1Bifacial enhancement layers and photovoltaic devices including the same
Publication Date: 2024.12.12 FIRST SOLAR INC
  • US20240413254A1 patent drawing
  • US20240413254A1 patent drawing
  • US20240413254A1 patent drawing

AI summary

Photovoltaic devices having bifacial enhancement are described herein.