Bilayer Thermoelectric Sensor for Self-Powered Temperature Measurement
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Solution Overview
Problem
Current temperature measurement methods for electronic components, such as power transistors, require additional manufacturing steps and electrical power, complicating the process and increasing costs.
Innovation Solution
A multilayer thermoelectric sensor is developed, comprising a bilayer with undoped semiconductor materials and a p-doped semiconductor or metal, generating an electron gas at the interface, allowing temperature measurement without an external power source, simplifying the manufacturing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If thermistors or external thermistors are used to measure temperature, then temperature measurement is achieved, but additional manufacturing steps and electrical power are required
Solution Approach 1:
The patent combines the temperature sensing function directly into the power electronic component by forming the thermoelectric sensor on the same semiconductor substrate as the power transistor. This integration eliminates the need for separate external thermistors and reduces manufacturing steps while maintaining accurate temperature measurement capability.
Solution Approach 2:
The thermoelectric sensor generates its own electrical power through the Seebeck effect by utilizing the temperature difference between the hot side (near the power transistor) and cold side (on the backside of the substrate). This self-powered operation eliminates the need for external power sources required by conventional thermistors.
2Measurement precision
If thermistors are used to measure temperature, then temperature measurement is achieved, but additional manufacturing steps are required
Solution Approach 1:
The patent integrates the thermoelectric sensor fabrication into the existing power electronic component manufacturing process. Both the power transistor and thermoelectric sensor are formed on the same semiconductor substrate using compatible fabrication techniques, eliminating separate manufacturing steps for external thermistors.
3Measurement precision
If external power source is used for thermistors, then temperature measurement is enabled, but device complexity increases
Solution Approach 1:
The thermoelectric sensor utilizes the temperature gradient that naturally exists in power electronic components during operation. The hot side is positioned near the power transistor while the cold side is on the backside of the substrate, creating a self-powered operation through the Seebeck effect without requiring external power sources.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables accurate temperature measurement of electronic components without the need for additional manufacturing steps or electrical power, improving efficiency and reducing complexity.
Implementation Method 1
a first thermoelectric member comprising at least a portion of a bilayer whose layers are made of different materials... the thermoelectric couple being configured to generate an electron gas at the interface between the layers of the bilayer, during heating of the thermoelectric sensor
Implementation Method 2
The bilayer, by generating an electron gas at the interface between the layers which constitute it under the effect of heating, behaves substantially like an n-doped semiconductor thermoelectric material
Data Source
Figure 1~3
Figure 4~5a
Figure 5b~6
AI summary
Multilayer thermoelectric sensor (350) for generating an electric current under the effect of heating, the thermoelectric sensor comprising a support (10) and a thermocouple (300a-b) borne by the support and comprising: - a first thermoelectric member (70a-b) comprising at least a portion of a bilayer (28), the layers of which are made of different materials; and - a second thermoelectric member (155a-b) comprising a p-doped semiconductor material and/or a thermoelectric metal, the thermocouple being configured to generate an electron gas at the interface (75a-b) between the layers of the bilayer when the thermoelectric sensor is heated.