Binary Cu Compound Solar Cell Doping
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing solar cell technologies face challenges in achieving high photoelectric conversion efficiency and uniformity due to the complexity of multi-component structures, particularly in Cu-based compound semiconductors, which are difficult to optimize and prone to carrier recombination.
Innovation Solution
A method involving the formation of an internal electric field layer by doping Ti or Si impurities in a binary Cu compound semiconductor to reduce electron and hole recombination, with an impurity material layer adjacent to the light absorbing layer, facilitating the creation of a p-n junction and improving electrode collection efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a multi-component CIGS structure is used as light absorbing layer, then the solar cell can be prepared at lower costs compared to crystalline Si, but it becomes difficult to achieve uniformity and reproducibility due to complexity in optimizing each component material
Solution Approach 1:
The patent extracts and eliminates unnecessary component materials from the light absorbing layer structure. Instead of using multi-component CIGS (Cu, In, Ga, Se), the invention uses a simplified binary compound semiconductor (Cu2O or Cu2S) as the light absorbing layer, removing In and Ga components to achieve both low cost and high uniformity.
Solution Approach 2:
The patent uses composite material structures with doping layers. The light absorbing layer is formed by combining binary compound semiconductor materials with doped impurity materials (Ti, Si, Ge, Sn) to create a composite structure that maintains simplicity while achieving optimized electrical and optical properties for high uniformity and reproducibility.
2Reliability
If high-quality silicon crystal is used to achieve high efficiency solar cell, then photoelectric conversion efficiency can exceed 25%, but it becomes difficult to obtain economical efficiency due to high material costs
Solution Approach 1:
The patent replaces expensive high-quality silicon crystal with cheaper binary compound semiconductor materials (Cu2O or Cu2S) that can be prepared at lower costs. The invention uses cost-effective materials like copper oxide or copper sulfide combined with inexpensive dopants (Ti, Si, Ge, Sn) to achieve high efficiency without requiring expensive silicon substrates.
Solution Approach 2:
The patent changes the material composition parameters by using binary compound semiconductors with adjustable band gaps through doping. By controlling the type and concentration of dopant atoms (Ti, Si, Ge, Sn), the invention optimizes electrical conductivity and carrier separation efficiency to achieve high photoelectric conversion with low-cost materials.
3Reliability
If doping impurity material layer is formed adjacent to light absorbing layer, then internal electric field is created to reduce carrier recombination and improve collection efficiency, but the manufacturing process becomes more complex
Solution Approach 1:
The patent merges the doping layer formation process with the light absorbing layer fabrication process. The impurity material layer is formed adjacent to the light absorbing layer using the same deposition techniques (sputtering, CVD, or solution methods) already employed for creating the binary compound semiconductor layer, thereby reducing process complexity while achieving internal electric field formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the photoelectric conversion efficiency, improves uniformity and reproducibility, and simplifies the manufacturing process by stabilizing the physical properties of the solar cell, leading to increased efficiency and longer-lasting performance.
Implementation Method 1
forming a doping layer by diffusing the dopant atom into a portion of the light absorbing layer
Implementation Method 2
a solar cell which has higher efficiency than a crystalline Si solar cell
Data Source
Figure 1~2
Figure 3~4
AI summary
The present invention relates to a Cu compound solar cell structure, which enables improvement of the photoelectric conversion efficiency of a solar cell, and a method for preparing same. A solar cell, according to the present invention, comprises a light-absorbing layer, comprising a Cu compound or Cd compound, between two electrodes facing each other, has an impurity material layer, comprising an impurity element to be provided to the Cu compound or Cd compound, formed on any one side or both sides between the two electrodes and the light absorbing layer, and has a doping layer formed on one part of the light absorbing layer by means of the impurity element being diffused on the light absorbing layer. In addition, a solar cell, according to the present invention, has an internal electric field layer such as a p-n junction by means of impurity doping.