BioFET Integrated Circuit with Ion-Sensing Passivation Layer
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Solution Overview
Problem
Current biosensors that incorporate transistors for detecting biomolecules face challenges in efficiently converting signals and integrating with semiconductor processes for integrated circuits, limiting their sensitivity and scalability.
Innovation Solution
The development of an integrated circuit device with a bioFET (biological field-effect transistor) structure, featuring a device layer with source/drain regions and a channel region, an interconnect structure, conductive layers, and a passivation layer that forms a bioFET with ion-sensing capabilities, allowing for electrical detection of biomolecules and temperature control within a CMOS platform.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If conventional biosensors are used for biomolecule detection, then detection capability is achieved, but signal conversion speed and integration with semiconductor processes are limited
Solution Approach 1:
The patent merges the biological sensing function with the semiconductor transistor structure by integrating the bioFET channel region directly into the CMOS device layer. This combination allows the biosensor to operate within the semiconductor manufacturing ecosystem while maintaining fast signal conversion characteristics inherent to transistor-based detection.
Solution Approach 2:
The bioFET structure serves multiple functions: it acts as both a transistor for fast electrical signal conversion and a biosensor for specific biomolecule detection. The passivation layer with ion-sensing capability enables temperature control and thermal-mediated detection, while the integrated circuit structure provides scalability and compatibility with semiconductor processes.
2Productivity
If biosensors are integrated with transistors for fast signal conversion, then detection speed improves, but sensitivity and scalability are limited
Solution Approach 1:
The patent applies local quality by creating a specialized passivation layer with ion-sensing capability in the channel region of the bioFET. This localized functional layer enhances detection sensitivity at the critical sensing interface while the rest of the transistor structure maintains its scalability and manufacturing compatibility.
Solution Approach 2:
The bioFET employs composite material structures combining semiconductor materials for the transistor function with ion-sensing materials in the passivation layer. This composite approach enables both high sensitivity detection and compatibility with standard semiconductor manufacturing processes, achieving scalability without sacrificing measurement precision.
3Adaptability or versatility
If a bioFET structure with ion-sensing capabilities is implemented, then detection sensitivity and thermal control improve, but device complexity increases
Solution Approach 1:
The patent segments the bioFET structure into distinct functional regions: the transistor component for signal conversion, the passivation layer with ion-sensing capability for sensitivity enhancement, and the channel region for thermal control. This segmentation allows each component to be optimized independently while maintaining overall system simplicity through modular integration.
Solution Approach 2:
The passivation layer acts as an intermediary between the semiconductor transistor and the biological environment. It provides ion-sensing capability for enhanced detection sensitivity while protecting the underlying transistor structure, thereby enabling complex detection functions without proportionally increasing overall device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables fast signal conversion and high sensitivity in detecting biomolecules, facilitating scalable integration with semiconductor processes and enabling thermal-mediated and electrical-mediated detections, such as PCR and bio-molecule detection with high resolution and throughput.
Implementation Method 1
a passivation layer continuously disposed on the conductive layer and the channel region... forming a bioFET with ion-sensing capabilities
Implementation Method 2
biosensors that include transistors are sensors that electrically sense charges, photons, and mechanical properties of bio-entities or biomolecules
Implementation Method 3
enabling thermal-mediated and electrical-mediated detections, such as PCR and bio-molecule detection with high resolution and throughput
Data Source
AI summary
An integrated circuit device includes a device layer, an interconnect structure, a conductive layer, a passivation layer and a bioFET. The device layer has a first side and a second side and include source/drain regions and a channel region between the source/drain regions. The interconnect structure is disposed at the first side of the device layer. The conductive layer is disposed at the second side of the device layer. The passivation layer is continuously disposed on the conductive layer and the channel region and exposes a portion of the conductive layer. The bioFET includes the source/drain regions, the channel region and a portion of the passivation layer on the channel region.