BioFET Protective Layer for Corrosion Resistance

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Solution Overview

Problem

The fabrication and operation of biological field-effect transistors (BioFETs) face challenges due to compatibility issues between semiconductor fabrication processes and biological applications, sensitivity, and resolution limitations, particularly in maintaining the integrity of the top metal plate from corrosion and ensuring proper alignment of microwells to prevent misalignment-induced defects.

Innovation Solution

A method and structure for forming BioFETs with a protective layer over and surrounding the top metal stack, including a sensing layer on the microwell sidewalls to increase surface area and prevent corrosion, while maintaining proper alignment through a top metal stack design that includes an underlayer, top metal, and a protective layer, ensuring separation from analytes and reducing manufacturing costs.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a top metal plate is used in BioFET fabrication, then electrical connectivity is improved, but the metal plate is susceptible to corrosion from analytes

Engineering Contradiction:
Improveelectrical connectivityVSAvoidcorrosion
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A protective layer is introduced as an intermediary between the top metal plate and the analyte. This protective layer prevents direct contact between the metal and corrosive biological samples while maintaining electrical connectivity through the metal stack, thereby resolving the contradiction between electrical performance and corrosion resistance.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

A thin film protective layer is deposited over the top metal plate to provide corrosion protection. This thin film approach maintains the electrical properties of the metal stack while providing a barrier against analyte-induced corrosion, balancing connectivity and protection.

Inventive Principle:
Principle #30Flexible shells and thin films

2Manufacturing precision

If microwell alignment is made more stringent to prevent misalignment defects, then manufacturing precision is improved, but device complexity and manufacturing difficulty increase

Engineering Contradiction:
Improvemicrowell alignmentVSAvoidalignment control
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The top metal stack structure is designed with dimensions and tolerances that provide a margin of error for microwell alignment. By pre-designing the alignment tolerance buffer into the metal stack geometry, the system accommodates manufacturing variations without requiring extremely tight alignment control, thus reducing device complexity while maintaining precision.

Inventive Principle:
Principle #11Beforehand cushioning (Prior cushioning)

3Measurement precision

If the top metal plate area is increased to improve signal intensity, then sensing performance is improved, but the area available for other components is reduced

Engineering Contradiction:
Improvesignal intensityVSAvoidchip area
Core Design Contradiction:
Measurement precisionVSArea of stationary object

Solution Approach 1:

The top metal stack is configured with optimized local dimensions - the metal stack area is increased to enhance signal intensity at the sensing location, while the overall chip layout is optimized to accommodate this local increase without proportionally increasing total chip area. This allows targeted improvement of signal strength in the sensing region while maintaining efficient use of overall chip real estate.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS9417209B2Biosensing well array with protective layer
Publication Date: 2016.08.16 LIFE TECHNOLOGIES CORP
  • US9417209B2 patent drawing
  • US9417209B2 patent drawing
  • US9417209B2 patent drawing

AI summary

The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET includes a microwells having a sensing layer, a top metal stack under the sensing layer, and a multi-layer interconnect (MLI) under the top metal stack. The top metal stack includes a top metal and a protective layer over and peripherally surrounding the top metal.