Biometric Sensor-Display Layout With Mixed TFT Materials
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Solution Overview
Problem
Existing display devices face challenges in integrating biometric sensors into the display screen to reduce the frame size while providing biometric authentication, as conventional fingerprint sensors are separate from the display, limiting the display region and desiring a narrow-frame or frame-less design.
Innovation Solution
The integration of biometric sensors into the display screen is achieved by overlapping and sharing the side region with display drivers, using thin-film transistors with different semiconductor materials, and employing shielding layers to minimize interference, thereby reducing the non-display region and enhancing signal quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If a fingerprint sensor is provided separately from the display screen, then biometric authentication can be provided, but the display region is limited and the frame size is large
Solution Approach 1:
The patent combines the fingerprint sensor and display screen into a single integrated structure. The sensor is disposed on the display screen, with the sensing unit adjacent to the light emitting unit, allowing both display and biometric authentication functions in the same region, thereby increasing the display region and reducing frame size.
Solution Approach 2:
The integrated structure serves multiple functions: the light emitting unit provides display functionality while the adjacent sensing unit performs biometric authentication. This multi-functional design eliminates the need for separate sensor modules, reducing overall device complexity despite the integration challenge.
2Reliability
If transistors with different semiconductor materials are used, then device performance can be optimized, but manufacturing complexity increases
Solution Approach 1:
The patent applies different semiconductor materials to different transistor types based on their specific functional requirements. The first transistor uses a first semiconductor material optimized for its function, while the second transistor uses a second semiconductor material suited for its different function, allowing each component to have locally optimized performance.
Solution Approach 2:
The transistor structure is segmented into different types with different semiconductor materials. The first transistor and second transistor are structurally divided and use different materials, while the third transistor uses one of the same materials as the first or second transistor, creating a segmented approach to material selection that balances performance and manufacturability.
3Length of stationary object
If the sensing unit is integrated adjacent to the light emitting unit, then the frame size is reduced, but signal interference may increase
Solution Approach 1:
The patent positions the sensing unit adjacent to but separate from the light emitting unit, using the shared side region as an intermediary space. This arrangement allows close integration for compactness while maintaining sufficient separation to minimize signal interference between the two functional units.
Solution Approach 2:
Instead of placing the sensing unit in the same planar layer as the light emitting unit, the patent utilizes the vertical dimension by disposing both units on the display screen in adjacent positions, effectively using spatial arrangement in multiple dimensions to achieve both compact integration and interference reduction.
Data Source
AI summary
An electronic device includes a first substrate, a light emitting unit, a sensing unit, and first to third transistors. The light emitting unit is disposed on the first substrate. The sensing unit is disposed on the first substrate and adjacent to the light emitting unit. The first transistor is disposed on the first substrate and electrically connected to the light emitting unit. The second transistor is disposed on the first substrate and electrically connected to the first transistor, wherein a semiconductor of the first transistor is different in material from a semiconductor of the second transistor. The third transistor is disposed on the first substrate and electrically connected to the sensing unit, wherein a semiconductor of the third transistor and one of the semiconductor of the first transistor and the semiconductor of the second transistor are the same in material.