Biosensor Micro-well Structural Integrity via Semiconductor Substrate
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Solution Overview
Problem
Miniaturized biosensor devices face challenges with reduced micro-well sizes leading to residue overhangs and weak mechanical strength of photoresist materials, which affect illumination efficiency and fluorescence light collection, causing cross-talk and inaccurate detection due to collapsed isolation walls.
Innovation Solution
The development of biosensor devices with robust micro-well structures is achieved by forming micro-wells within a thinned semiconductor layer using semiconductor on insulator (SOI) substrates or bulk semiconductor materials, eliminating residue overhangs and integrating micro-wells with the semiconductor layer for enhanced mechanical strength and fluorescence light collection efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If photoresist materials are used to form micro-wells in miniaturized biosensor devices, then micro-well sizes are reduced, but mechanical strength decreases leading to collapsed isolation walls
Solution Approach 1:
The patent changes the material parameter from photoresist to semiconductor material, fundamentally altering the mechanical properties. The semiconductor material provides sufficient mechanical strength to prevent collapse of isolation walls while maintaining miniaturized dimensions, resolving the contradiction between small size and structural integrity.
Solution Approach 2:
The patent employs a composite structure where semiconductor material forms the micro-well walls integrated with the substrate. This composite approach combines the structural strength of semiconductor material with the functional requirements of the biosensor, eliminating the weakness of pure photoresist structures at miniaturized scales.
2Volume of moving object
If micro-well sizes are reduced for miniaturization, then device size decreases, but residue overhangs form affecting illumination efficiency
Solution Approach 1:
The patent extracts and removes the problematic residue overhangs by using semiconductor material that can be precisely etched and defined. The clean sidewalls achieved through semiconductor processing eliminate the overhang formations that plague photoresist-based structures, maintaining illumination efficiency despite miniaturization.
Solution Approach 2:
The patent replaces the photochemical system (photoresist) with a semiconductor processing system. This substitution enables precise control over micro-well geometry through controlled etching and deposition, eliminating residue overhangs and ensuring consistent illumination efficiency at reduced device sizes.
3Ease of manufacture
If photoresist materials are used for micro-well formation, then fabrication is simpler, but cross-talk occurs due to collapsed isolation walls
Solution Approach 1:
The patent segments the device into distinct micro-wells with isolation walls formed from semiconductor material. This segmentation prevents cross-talk between adjacent detection regions while maintaining a unified fabrication process, achieving both manufacturing simplicity and detection precision through integrated semiconductor processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves fluorescence light collection efficiency and reduces cross-talk, enabling more accurate molecular detection by ensuring consistent illumination and robust micro-well structures that withstand sample solution flow without collapsing.
Implementation Method 1
An optical filter layer is formed over and physically contacting the first semiconductor layer
Implementation Method 2
A plurality of detection elements are formed in the first semiconductor layer... capable of receiving light illumination from the back side of a substrate
Data Source
AI summary
A biosensor device is provided, including a first semiconductor layer formed over an interconnect structure. A plurality of detection elements are formed in the first semiconductor layer. An optical filter layer is formed over and physically contacts the first semiconductor layer. A second semiconductor layer is formed over the optical filter layer, having opposing first and second surfaces, wherein the first surface physically contacts the optical filter layer. A plurality of isolation walls are formed over the second semiconductor layer from the second surface thereof, defining a plurality of micro-wells over the second semiconductor layer, wherein the isolation walls and the second semiconductor layer comprises the same material, and the micro-wells are correspondingly arranged with the detection elements. An immobilization layer is formed over the second semiconductor layer exposed by the micro-wells and a plurality of capture molecules are formed over the immobilization layer in the micro-wells.