Bipolar Junction Transistor Base Region Overlie Structure
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Solution Overview
Problem
Bipolar junction transistors often operate at high voltages, leading to high power consumption and introduce parasitic capacitances or resistances, which result in slower performance and increased power losses, especially in RF applications, and existing designs are costly to manufacture.
Innovation Solution
A bipolar junction transistor structure with a substrate having a first conductivity type, an emitter region of a second conductivity type, a collector region of the second conductivity type, and a base region overlie structure that separates the emitter and collector regions, allowing for low voltage operation and reduced parasitic resistances and capacitances, fabricated using techniques that include doping and dielectric layers to control the base region width and minimize recombination of electrical carriers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If bipolar junction transistors operate at high voltages, then power output is improved, but power consumption increases and parasitic capacitances and resistances worsen performance
Solution Approach 1:
The patent changes the operating voltage parameter from high to low voltages, fundamentally altering the transistor's operational characteristics. This parameter change enables the transistor to achieve adequate power output at lower voltages, thereby reducing power consumption and minimizing parasitic effects that dominate at high voltages
2Power
If bipolar junction transistors operate at high voltages, then power output is improved, but parasitic capacitances and resistances increase causing slower performance
Solution Approach 1:
The patent changes the operating voltage parameter from high to low voltages, fundamentally altering the transistor's operational characteristics. This parameter change enables the transistor to achieve adequate power output at lower voltages, thereby reducing power consumption and minimizing parasitic effects that dominate at high voltages
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables bipolar junction transistors to operate efficiently at low voltages, reducing power consumption and improving performance by minimizing parasitic resistances and capacitances, thus enhancing the speed and efficiency of RF applications while maintaining low manufacturing costs.
Implementation Method 1
the base region overlie structure masks the base region during the forming of the emitter region and the collector region
Implementation Method 2
forming an emitter region of a second conductivity type in a first portion of the substrate region and a collector region of the second conductivity type
Data Source
AI summary
A structure, including a bipolar junction transistor and method of fabrication thereof, is provided herein. The bipolar junction transistor includes: a substrate including a substrate region having a first conductivity type; an emitter region over a first portion of the substrate region, the emitter region having a second conductivity type; a collector region over a second portion of the substrate region, the collector region having the second conductivity type; and, a base region overlie structure disposed over, in part, the substrate region. The base region overlie structure separates the emitter region from the collector region and aligns to a base region of the bipolar junction transistor within the substrate region, between the first portion and the second portion of the substrate region.