Vertical Bipolar Transistor With Integrated Collector Resistor
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Solution Overview
Problem
Current semiconductor devices lack a resistor-equipped vertical bipolar transistor with a collector resistor, making it costly to construct small signal amplifiers like common emitter or common base amplifiers without using separate discrete resistors on a printed circuit board.
Innovation Solution
A semiconductor device with a bipolar transistor featuring a collector region, base region, and emitter region, where the collector terminal includes a first electrically conductive part connected to the collector region, an electrically resistive part, and a second electrically conductive part for external connection, allowing for integrated resistor functionality on the major surface of the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a standard bipolar transistor is used with separate discrete resistors on a printed circuit board, then the amplifier can be constructed, but the component cost and pick and place cost increase
Solution Approach 1:
The patent merges the resistor and transistor into a single integrated device called a Resistor Equipped Transistor (RET). The resistor is fabricated on the same semiconductor substrate as the transistor, with the resistor's first terminal connected to the transistor's collector and the second terminal providing an external connection. This integration eliminates the need for separate discrete resistors and their associated pick-and-place assembly, directly reducing manufacturing cost and assembly complexity.
2Ease of manufacture
If a RET with collector resistor is not available, then existing RET designs can be used, but small signal amplifiers cannot be realized at reasonable cost
Solution Approach 1:
The patent creates a universal RET device that can serve multiple amplifier configurations (common emitter, common base, etc.) by providing the collector resistor integration. This multi-functional design allows the same RET component to be used across different amplifier topologies, enhancing adaptability while maintaining cost effectiveness through single-component integration rather than requiring different component combinations for different configurations.
3Device complexity
If resistors are provided on the major surface connected to base and emitter, then base and emitter resistors are available, but no vertical bipolar RET with collector resistor is available
Solution Approach 1:
The patent inverts the conventional RET design by providing the resistor for the collector terminal rather than just for base and emitter terminals. In traditional RETs, resistors are attached to the top surface for base and emitter connections, but the collector uses the back surface. This invention places a resistor in the collector path on the major surface, creating a vertical bipolar RET with collector resistor functionality that enables new circuit configurations and improves adaptability.
Data Source
AI summary
A semiconductor device and a method of making the same is provided. The device includes a semiconductor substrate having a major surface and a back surface. The device also includes a bipolar transistor. The bipolar transistor has a collector region located in the semiconductor substrate; a base region located within the collector region and positioned adjacent the major surface; an emitter region located within the base region and positioned adjacent the major surface; and a collector terminal located on the major surface of the semiconductor substrate. The collector terminal includes: a first electrically conductive part electrically connected to the collector region; an electrically resistive part electrically connected to the first electrically conductive part, and a second electrically conductive part for allowing an external electrical connection to be made the collector terminal. The second conductive part is electrically connected to the first conductive part via the resistive part.