Bipolar Transistor Collector Segmentation for Parasitic Current Reduction
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Solution Overview
Problem
As bipolar transistors are miniaturized to increase integration density, the reduced distance between the emitter and insulation regions leads to an increase in substrate current, causing undesirable driving of adjacent transistors and higher power consumption, which can result in component damage.
Innovation Solution
The design includes a bipolar transistor with a semiconductor zone surrounded by an insulation structure of opposite conductivity type, featuring collector zones with strategically placed openings that effectively increase the width of the base of the parasitic transistor, reducing the substrate current by lengthening the current path from the emitter to the insulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the component dimensions of bipolar transistors are reduced to increase integration density, then the integration density increases, but the substrate current increases due to reduced distance between emitter and insulation regions
Solution Approach 1:
The collector structure is segmented into multiple collector zones separated by openings, which divides the current path into multiple segments. This segmentation increases the effective base width of the parasitic transistor without increasing the overall lateral dimensions, thereby reducing substrate current while maintaining small component footprint for high integration density.
Solution Approach 2:
The invention transitions from a planar two-dimensional layout to a three-dimensional structure by forming collector zones at different depths and separating them with openings. This vertical dimensionality increase allows the current path to extend deeper into the semiconductor body, effectively increasing base width without increasing lateral dimensions.
2Productivity
If the component dimensions are reduced, then the integration density increases, but the power consumption increases due to increased substrate current
Solution Approach 1:
By segmenting the collector into multiple zones with openings between them, the invention forces the substrate current to travel through a longer, more tortuous path. This increases the effective base width of the parasitic transistor, reducing its gain and thereby reducing the substrate current and associated power consumption while maintaining compact dimensions for high integration density.
3Productivity
If the component dimensions are reduced, then the integration density increases, but adjacent bipolar transistors are undesirably driven due to increased substrate current
Solution Approach 1:
The segmented collector structure with openings creates multiple reflection points for charge carriers in the base region of the parasitic transistor. This increases the probability of recombination before carriers can reach the insulation structure, effectively reducing the substrate current that could otherwise cause undesirable driving of adjacent transistors and potential component damage.
Solution Approach 2:
The openings in the collector structure act as intermediary regions that interrupt and redirect the current flow. By introducing these intermediate structures, the invention reduces the direct coupling between the emitter and insulation regions, thereby reducing the substrate current that could affect adjacent components and improving overall circuit reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the substrate current and power consumption by increasing the effective width of the base of the parasitic bipolar transistor, thereby preventing component damage and optimizing circuit performance.
Implementation Method 1
Since the emitter and the base of the bipolar transistor form, together with the semiconductor region of the adjoining insulation, a parasitic bipolar transistor
Data Source
AI summary
An integrated circuit including a bipolar transistor is disclosed. One embodiment provides an insulation structure used to form a junction insulation, a collector structure formed inside a semiconductor zone having openings dividing the collector structure into collector zones. The collector zones are arranged in such a manner that a shortest lateral distance between an emitter zone and the insulation structure runs at least through one of the collector zones.