Bismuth-Phosphate Metal Oxide Resists for Stable EUV Lithography
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current metal oxide resist (MOR) materials used in extreme ultraviolet (EUV) lithography are not sufficiently stable in atmospheric conditions, leading to degradation and increased power requirements for EUV light exposure.
Innovation Solution
Development of metal oxide resist materials incorporating bismuth-phosphorus compounds, such as bismuth-14 phosphorus clusters and one-dimensional bismuth-phosphorus coordination polymers, which are highly photo-sensitive and atmospherically stable, enabling their use in High NA EUV lithography processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If current metal oxide resist materials are used in EUV lithography, then photolithography patterning can be performed, but the materials are not sufficiently stable in atmospheric conditions leading to degradation
Solution Approach 1:
The patent employs metal oxide resist materials containing specific metal elements (锡、铪、锆、钛、钒、铌、钽) combined with organic compounds featuring aromatic groups and specific functional groups. This composite structure leverages the stability of metal oxides while incorporating photoactive organic components, achieving both atmospheric stability and photolithographic functionality.
Solution Approach 2:
The patent modifies the chemical composition parameters of the resist material by selecting specific metal oxides with appropriate band gaps and combining them with organic compounds having specific molecular weights and functional groups. This parameter optimization enhances atmospheric stability while maintaining the required photosensitivity for EUV lithography.
2Productivity
If current metal oxide resist materials are used, then patterning can proceed, but power requirements for EUV light exposure increase
Solution Approach 1:
The patent optimizes the photosensitivity parameters of the resist material by selecting metal oxides with appropriate band gap energies and combining them with organic compounds having specific absorption characteristics. This enables the resist to respond more efficiently to EUV light, reducing the power requirements for exposure while maintaining patterning quality.
3Manufacturing precision
If conventional resist materials are used, then standard deposition thicknesses can be applied, but thinner layers are needed for improved resolution
Solution Approach 1:
The patent modifies the physical and chemical parameters of the resist material, including molecular weight, functional group composition, and metal oxide content, to achieve optimal film properties. These parameter adjustments enable the formation of uniform, stable thin films with improved resolution while maintaining adequate photosensitivity and atmospheric stability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The bismuth-phosphorus compounds provide enhanced stability and photosensitivity, reducing the power requirements for EUV light exposure and enabling the deposition of thinner layers, thus improving the efficiency and resolution of EUV lithography processes.
Implementation Method 1
the bismuth-phosphorus compounds disclosed herein are highly photo-sensitive and can be used in High NA EUV lithography processes
Implementation Method 2
The bismuth-containing precursor and the phosphorus-containing precursor can be concurrently applied to the base material via vapor deposition
Implementation Method 3
The bismuth-containing precursor and the phosphorus-containing precursor can be concurrently applied to the base material as a solution via spin-coating
Data Source
AI summary
Metal oxide resist layers including bismuth and phosphorus, and related methods are disclosed herein. An example method of fabricating a semiconductor device, the method including depositing a metal oxide resist layer on a base material by applying a precursor including bismuth, the metal oxide resist layer including a bismuth phosphate compound and patterning the metal oxide resist layer.