Bismuth-Containing III-V Semiconductor for Stable Infrared Emission
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Semiconductor lasers emitting at infrared wavelengths face significant temperature dependence issues, leading to unstable light emission characteristics and the need for costly thermo-electric control to maintain constant temperature, resulting in inefficient power usage.
Innovation Solution
A light emitting semiconductor device with an active region comprising III-V materials including Bismuth and other group V elements, where the percentage of Bismuth is between 3% to 15%, ensuring the spin-orbit splitting energy exceeds the band gap energy, thereby suppressing non-radiative recombination processes and stabilizing light emission across temperature ranges.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If thermo-electric control (TEC) is used to maintain constant temperature, then temperature stability is improved, but power consumption increases dramatically and cost increases
Solution Approach 1:
The patent changes the material parameter by incorporating Bismuth into the III-V semiconductor alloy, specifically adjusting the composition to achieve spin-orbit splitting energy greater than band gap energy. This material parameter change fundamentally alters the temperature dependence characteristics of the device, eliminating the need for active temperature control and dramatically reducing power consumption while maintaining stable operation
Solution Approach 2:
The patent uses composite material GaAsBi (Gallium Arsenide Bismide) combining elements from different groups. The specific composition GaAs1-xBix with x in the range 0.03 to 0.15 creates a material with unique properties where spin-orbit splitting exceeds band gap energy, fundamentally changing the temperature-stability relationship without requiring external control mechanisms
2Stability of the object's composition
If thermo-electric control (TEC) is used to maintain constant temperature, then emission stability is improved, but device complexity and cost increase
Solution Approach 1:
By changing the material composition parameter to include Bismuth at specific concentrations (3-15% of group V elements), the device achieves intrinsic emission stability without requiring complex temperature control systems. The spin-orbit splitting energy being greater than band gap energy creates a material that is fundamentally less sensitive to temperature variations
Solution Approach 2:
The patent extracts and eliminates the need for thermo-electric control components by using Bismuth-containing materials. This removes the TEC subsystem entirely, simplifying the device structure and reducing complexity while maintaining stable light emission characteristics across temperature ranges
3Temperature
If conventional III-V materials are used for IR emission, then appropriate band gap is achieved, but temperature sensitivity increases
Solution Approach 1:
The patent modifies the material parameter by adding Bismuth to the III-V alloy, changing the electronic band structure such that spin-orbit splitting energy becomes greater than band gap energy. This parameter change fundamentally reduces temperature sensitivity while maintaining appropriate band gap for infrared emission wavelengths
Solution Approach 2:
By creating a composite material GaAsBi combining Gallium, Arsenic, and Bismuth, the patent achieves a material with superior temperature stability compared to conventional III-V materials. The specific composition GaAs1-xBix with controlled Bismuth content creates unique electronic properties that reduce temperature dependence of threshold current and emission characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the temperature sensitivity of the semiconductor device, eliminating the need for thermo-electric control and enhancing the wall-plug efficiency by maintaining stable light emission characteristics without the need for temperature stabilization, thus improving the overall energy efficiency and reducing costs.
Implementation Method 1
the spin-orbit splitting energy of the material is greater than the band gap energy of the material
Implementation Method 2
Light emitting inter-band semiconductor devices emit light when an energetic electron in the conduction band recombines with a hole in the valence band. Recombination of the electron and hole results in a release of energy in the form of emission of a photon.
Data Source
AI summary
A light emitting semiconductor device (401) has an active region (405) formed of Bismuth (Bi) and one or more other group V elements. In a particular embodiment the III-V material comprises Gallium Arsenide (GaAs) in addition to Bismuth. The inclusion of Bismuth in the III-V material raises the spin-orbit splitting energy of the material while reducing the band gap. When the spin-orbit splitting energy exceeds the band gap, Auger recombination processes are inhibited, reducing the sensitivity of the light emitting semiconductor device (401) to changes in ambient temperature.