Bit Line Spacer Gapfill Structure for DRAM Yield and Reliability
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Solution Overview
Problem
Current semiconductor devices face challenges in achieving low failure rates and improved yield, as well as enhanced electrical and reliability characteristics, particularly due to the increasing demand for faster operating speeds and lower power consumption.
Innovation Solution
The semiconductor device design includes first and second active patterns with specific structural features such as center and edge portions, device isolation patterns, bit line node contacts, bit lines, storage node contacts, bit line spacers, and gapfill insulating patterns. These features are strategically arranged to improve fabrication processes and device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If integration density is increased to achieve faster operating speed and lower power consumption, then device performance is improved, but fabrication failure rate increases and yield decreases
Solution Approach 1:
The patent applies preliminary action by forming a gapfill insulating pattern before subsequent fabrication steps to prevent potential failures. The gapfill pattern is deposited in advance to fill recess regions, preventing void formation and ensuring proper adhesion for later processing steps, thereby improving yield without compromising operating speed
Solution Approach 2:
The gapfill insulating pattern serves as an intermediary element between the bit line spacer and the storage node contact. This intermediate layer mediates the interface between different structural components, ensuring proper adhesion and preventing direct contact that could cause fabrication failures or electrical issues
2Speed
If integration density is increased to achieve faster operating speed and lower power consumption, then device performance is improved, but manufacturing yield decreases
Solution Approach 1:
The gapfill insulating pattern is formed in advance to prevent potential manufacturing defects. By filling recess regions before subsequent deposition and etching steps, the patent prevents void formation and adhesion failures that would otherwise reduce manufacturing yield
Solution Approach 2:
The gapfill insulating pattern provides beforehand cushioning by creating a buffer layer that prevents stress concentration and adhesion failures. This protective layer cushions against potential manufacturing variations and process deviations, ensuring consistent yield across production batches
3Ease of manufacture
If device structure is simplified to reduce fabrication complexity, then ease of manufacture is improved, but electrical and reliability characteristics deteriorate
Solution Approach 1:
The patent applies local quality by adding the gapfill insulating pattern only in specific recess regions where it is most needed, rather than uniformly across the entire device. This localized approach maintains electrical performance in critical areas while adding minimal complexity to the overall fabrication process
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enables the fabrication of semiconductor devices with reduced failure rates, improved yield, and enhanced electrical and reliability characteristics, thereby meeting the demands for faster speeds and lower power consumption.
Implementation Method 1
forming a gapfill insulating pattern provided on a side surface of the bit line node contact to fill the recess region
Implementation Method 2
an intermediate material between the gapfill insulating pattern and the device isolation pattern. The intermediate material may include at least one of a halogen element and carbon
Data Source
AI summary
A semiconductor device may include first and second active patterns, each including a center portion and an edge portion, the center portion of the first active pattern and the edge portion of the second active pattern adjacent to each other, a device isolation pattern between the first and second active patterns, a bit line node contact on the center portion of the first active pattern, a bit line on the bit line node contact, a storage node contact on the edge portion of the second active pattern, a bit line spacer between the bit line and the storage node contact, and a gapfill insulating pattern between a lower portion of the bit line spacer and the storage node contact. The center portion of the first active pattern may include a center oxide region in an upper portion thereof.