Bit Line Sidewall Protection With Shielded Height Control
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Solution Overview
Problem
The existing DRAM manufacture process struggles with precise control over the height of isolation structures on the sidewalls of bit line structures, leading to potential damage and significant risks to the subsequent manufacturing process, yield, and reliability of the product.
Innovation Solution
A method involving the formation of an initial protective structure on the sidewalls of bit line structures, followed by the creation of a shielding structure that covers the initial protective structure. The shielding structure is then used as an etching selection layer to remove exposed parts of the initial protective structure, resulting in protective structures with a defined second height.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the height of the isolation structure is increased to cover sidewalls of bit line structures, then the protection of bit line structures is improved, but the control accuracy of the manufacturing process deteriorates
Solution Approach 1:
The patent introduces a shielding structure as an intermediary element between the initial protective structure and the etching process. This shielding structure acts as a mediator that defines the etching boundary, allowing the initial protective structure to be formed with greater height for better protection while the shielding structure controls the final exposed height with precision during etching.
Solution Approach 2:
The patent performs preliminary actions by forming both the initial protective structure and the shielding structure before the etching process. The shielding structure is formed in advance to establish the precise height boundary, and the initial protective structure is formed with sufficient height to ensure coverage. This preliminary preparation allows the etching process to proceed with controlled precision without compromising the protective function.
2Reliability
If the isolation structure is used to cover sidewalls of bit line structures, then the reliability of the structure is improved, but the etching process may damage the sidewalls of bit line structures
Solution Approach 1:
The shielding structure serves as a protective intermediary during the etching process. It is positioned between the etching environment and the initial protective structure, controlling where etching occurs. This intermediary shielding structure prevents direct exposure of the initial protective structure's sidewalls to the etching process, thereby eliminating the harmful effect of etching damage while maintaining the protective coverage.
Solution Approach 2:
The patent applies preliminary anti-action by forming the shielding structure in advance to counteract the potential harmful effect of etching damage. The shielding structure is prepared beforehand to protect the critical regions during the subsequent etching process, preventing the harmful effect before it can occur to the initial protective structure and bit line structures.
3Ease of manufacture
If a simple protective structure is formed, then the manufacturing process is simplified, but the control over exposed protective structure height is insufficient
Solution Approach 1:
The patent segments the protective structure system into two distinct components: the initial protective structure and the shielding structure. This segmentation allows each component to have a specialized function - the initial protective structure provides comprehensive coverage with simple formation, while the shielding structure provides precise height control during etching. The segmentation enables both ease of manufacture and manufacturing precision without requiring a single complex structure.
Solution Approach 2:
The shielding structure acts as an intermediary that bridges the gap between simple protective structure formation and precise height control. It is a relatively simple structure to form that mediates between the initial protective structure and the etching process, providing the necessary precision control for exposed height while maintaining overall manufacturing simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control over the sidewall contour of bit line structures, enhancing the precision and reliability of semiconductor structures and ensuring higher yield in the manufacturing process.
Implementation Method 1
removing at least a part of the initial protective structure exposed by the shielding structure by using the shielding structure as an etching selection layer
Data Source
AI summary
The present disclosure provides a method of forming a semiconductor structure and a semiconductor structure. The method of forming a semiconductor structure includes: providing an initial structure, where the initial structure includes a substrate and bit line structures arranged at intervals on the substrate; forming an initial protective structure, where the initial protective structure at least covers a part of sidewalls of each of the bit line structures, and the initial protective structure has a first height in a direction parallel to the bit line structures; forming a shielding structure, where the shielding structure at least covers a part of sidewalls of the initial protective structure; and removing at least a part of the initial protective structure exposed by the shielding structure by using the shielding structure as an etching selection layer, to form protective structures each having a second height.