Bit Line Shielding Structure for Simplified Sidewall Gap Formation
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Solution Overview
Problem
The existing method for forming a gap within the insulation sidewall in semiconductor manufacturing is complex and difficult, requiring sequential formation of first and second insulation sidewalls with a sacrificial layer that needs to be removed, complicating the process.
Innovation Solution
A method where a shielding portion with a larger projection area than the insulation block is formed on the substrate, allowing a gap to be formed within the insulation sidewall during its formation, simplifying the process and reducing manufacturing difficulty by sealing the region between the shielding portion and the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a first insulation sidewall, a sacrificial layer, and a second insulation sidewall are sequentially formed and then the sacrificial layer is removed to form a gap, then a gap can be formed within the insulation sidewall, but the manufacturing process becomes complex and difficult
Solution Approach 1:
The shielding portion is formed in advance on the top of the insulation block with a projection area larger than the insulation block. This preliminary structure enables the gap to be formed automatically during the insulation sidewall formation process, eliminating the need for separate sacrificial layer deposition and removal steps. The shielding portion acts as a pre-configured template that defines the gap location and dimensions.
Solution Approach 2:
The formation of the gap and the insulation sidewall are merged into a single simultaneous process step. By forming the insulation sidewall on both the bit line sidewall and the shielding portion sidewall, the gap is automatically created between these two sidewalls without requiring separate sacrificial layer removal. This combines multiple functions (insulation and gap formation) into one operation.
2Ease of manufacture
If a shielding portion with larger projection area than the insulation block is formed, then the gap can be formed during insulation sidewall creation, but additional shielding portion formation steps are required
Solution Approach 1:
The shielding portion serves multiple functions: it acts as a structural support element, defines the gap boundaries, and serves as a template for gap formation. By making the shielding portion wider than the insulation block, it simultaneously provides mechanical support and creates the necessary overhang for gap formation, eliminating the need for separate gap definition steps.
Data Source
AI summary
A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The method includes the following steps. A bit line structure is formed on a substrate. Each of the bit lines is provided with an insulation block on a side facing away from the substrate. A shielding portion is formed on a top of the insulation block that faces away from the substrate. A projection area of the shielding portion on the substrate is larger than a projection area of the insulation block on the substrate. An insulation sidewall is formed on a sidewall of the bit line and a sidewall of the insulation block, and a gap extending to the substrate is formed within the insulation sidewall corresponding to the shielding portion.