Nonvolatile Memory Bit Line Trench Structure for Short Margin Control
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Solution Overview
Problem
Current nonvolatile memory devices face challenges in increasing operation speed and integration density while maintaining a reliable structure, particularly in the design of bit lines and trenches to prevent short-circuits and ensure reliable data storage.
Innovation Solution
A method of fabricating nonvolatile memory devices involves forming a transistor, a contact, and an information storage portion on a substrate, with specific trench structures and stop films to control the thickness and spacing of bit lines, ensuring a short margin between bit lines and transistors to enhance operation speed and integration density.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If the thickness of bit line is increased to improve signal strength and operation speed, then the short margin between bit line and gate pattern is reduced, but the risk of short-circuit increases
Solution Approach 1:
The patent introduces a vertical dimension by forming a groove beneath the bit line and filling it with conductive material. This three-dimensional structure allows the bit line to be thicker for improved signal strength while the groove provides physical separation and insulation, maintaining adequate short margin and preventing short-circuits between the bit line and gate pattern.
2Strength
If the thickness of bit line is increased to improve signal strength, then manufacturing complexity increases due to additional trench formation and filling steps
Solution Approach 1:
The groove is formed and filled with conductive material before the bit line is deposited. This preliminary action creates a pre-prepared substrate structure that simplifies the subsequent bit line formation process, allowing for thicker bit lines with improved signal strength while managing manufacturing complexity through staged fabrication.
3Productivity
If integration density is increased to process high-volume data, then the spacing between components is reduced, but the risk of short-circuit between bit line and gate pattern increases
Solution Approach 1:
By moving the insulation structure into the vertical dimension (groove beneath the bit line), the patent frees up horizontal spacing, allowing components to be placed closer together for higher integration density while the vertical groove structure maintains adequate electrical separation and prevents short-circuits.
Data Source
AI summary
Nonvolatile memory devices and methods of fabricating the same, include, forming a transistor in a first region of a substrate, forming a contact which is connected to the transistor, forming an information storage portion, which is disposed two-dimensionally, in a second region of the substrate, sequentially forming a stop film and an interlayer insulating film which cover the contact and the information storage portion, forming a first trench, which exposes the stop film, on the contact, and forming a second trench which extends through the stop film to expose the contact, wherein a bottom surface of the first trench is lower than a bottom surface of the information storage portion.