Bitline Sense Amplifier with Shared Equalizing Transistor Layout
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The increasing demand for higher functionality, higher speed, and smaller sized electronic components in semiconductor memory devices poses challenges in reducing the area occupied by memory cell regions and peripheral circuits, particularly in bitline sense amplifiers, which require efficient use of space and improved data processing efficiency.
Innovation Solution
The implementation of a bitline sense amplifier with an equalizing transistor and an amplifier connected between sensing bitlines, utilizing an equalizer to precharge bitlines with a precharge voltage and an amplifier to detect and amplify voltage differences, while sharing an active region with a supply transistor to optimize space usage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the number of upper conductors in the sense amplifier is reduced, then the area efficiency of the peripheral circuit is improved, but the functionality or performance of the sense amplifier may be compromised
Solution Approach 1:
The equalizer and supply transistor share a common active region, merging two separate transistor structures into one. This consolidation reduces the total number of upper conductors and improves area efficiency while maintaining the equalizer's precharge functionality and the supply transistor's voltage supply capability through shared substrate infrastructure
Solution Approach 2:
The shared active region serves dual purposes: it functions as the active region for the equalizer transistor during precharge operations and as the active region for the supply transistor during normal operation. This multi-functionality allows a single structural element to support multiple circuit functions, reducing overall area requirements
2Area of stationary object
If the area of memory cell region and peripheral circuit region is reduced to increase degree of integration, then the integration density is improved, but the data processing speed and functionality may be compromised
Solution Approach 1:
By merging the equalizer and supply transistor into a shared active region structure, the patent reduces the peripheral circuit area, allowing more sense amplifiers to be integrated in the same space. This increased integration density enables higher data throughput and processing capacity across the memory device
Solution Approach 2:
The patent optimizes the spatial arrangement of transistors by utilizing vertical stacking and three-dimensional layout techniques in the shared active region, allowing multiple functional elements to coexist in a compact footprint without compromising their electrical performance or signal processing capabilities
Data Source
AI summary
A bitline sense amplifier including: an amplifier which is connected between a first sensing bitline and a second sensing bitline, and detects and amplifies a voltage difference between a first bitline and a second bitline in response to a first control signal and a second control signal; and an equalizer which is connected between a first supply line through which the first control signal is supplied and a second supply line through which the second control signal is supplied, and pre-charges the first bitline and the second bitline with a precharge voltage in response to an equalizing control signal, wherein the equalizer includes an equalizing enable transistor in which a source terminal is connected to the first supply line and performs equalizing in response to the equalizing control signal.