Bipolar Junction Transistor Fin Isolation for Current Gain
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Solution Overview
Problem
Current manufacturing methods for fin-type bipolar junction transistors face challenges in achieving high performance and integration with Fin-FETs, particularly in reducing the effective base width to enhance current gain.
Innovation Solution
A bipolar junction transistor design that utilizes a shorter isolation structure to separate fin structures in the emitter and base regions, formed by a diffusion break process, reducing the effective base width and allowing for increased current gain.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional shallow trench isolation structure is used to separate fin structures, then the isolation between emitter and base regions is achieved, but the effective base width is too large which reduces current gain
Solution Approach 1:
The patent changes the length parameter of the isolation structure from conventional dimensions to a specific range of 20-40 nanometers, which is shorter than typical shallow trench isolation structures. This parameter change allows the isolation structure to fulfill its separating function while minimizing the effective base width, thereby improving current gain without compromising isolation effectiveness
2Reliability
If the isolation structure length is reduced to increase current gain, then the effective base width is reduced, but the manufacturing precision required increases
Solution Approach 1:
The patent performs preliminary actions by forming the isolation structure at an appropriate stage in the manufacturing process, allowing for controlled dimensioning before subsequent processing steps. The isolation structure is formed with predetermined dimensions (20-40 nm) early in the process, enabling precise control of the effective base width while maintaining compatibility with standard manufacturing capabilities
Data Source
AI summary
A bipolar junction transistor (BJT) includes a semiconductor substrate and a first isolation structure. The semiconductor substrate includes a first fin structure disposed in an emitter region, a second fin structure disposed in a base region, and a third fin structure disposed in a collector region. The first, the second, and the third fin structures are elongated in a first direction respectively. The base region is adjacent to the emitter region, and the base region is located between the emitter region and the collector region. The first isolation structure is disposed between the first fin structure and the second fin structure, and a length of the first isolation structure in the first direction is shorter than or equal to 40 nanometers. An effective base width of the BJT may be reduced by the disposition of the first isolation structure, and a current gain of the BJT may be enhanced accordingly.