Bipolar Junction Transistor Structure With Lateral-Vertical ESD Paths
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Solution Overview
Problem
Conventional transient voltage suppressor designs, such as vertical bipolar junction transistors, face challenges with increased circuit complexity, fabrication costs, and layout area consumption due to the need for backside metallization and internal component interference, which complicates ESD protection and reduces holding voltage.
Innovation Solution
A bipolar junction transistor structure with both lateral and vertical conducting paths is introduced, featuring a floating base design that includes a forward diode in series with the vertical n-p-n bipolar junction transistor, reducing circuit complexity and layout area consumption by eliminating the need for backside metallization and enhancing ESD performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a vertical bipolar junction transistor structure is employed, then ESD protection capability is improved, but device complexity and fabrication cost increase due to backside metallization requirements
Solution Approach 1:
The patent introduces a lateral conducting path as an additional dimension to the traditional vertical transistor structure. This lateral path provides an alternative current flow route that enables ESD protection without requiring backside metallization, thus resolving the contradiction between ESD capability and fabrication complexity
Solution Approach 2:
The transistor structure is segmented into distinct lateral and vertical conducting paths. The lateral path handles ESD current while the vertical path maintains normal transistor operation, allowing each path to be optimized independently and eliminating the need for complex backside metallization
2Reliability
If internal circuit component designs are increased to improve ESD protection, then ESD performance is improved, but circuit complexity and layout area consumption increase
Solution Approach 1:
The bipolar junction transistor is designed to perform multiple functions simultaneously: normal amplification through the vertical path and ESD protection through the lateral path. This multi-functionality eliminates the need for separate ESD protection components, reducing overall circuit complexity while maintaining superior ESD performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure effectively addresses the limitations of prior arts by providing superior ESD performance, reducing process complexity, and maintaining superior electrical properties, making it highly competitive for IC and semiconductor industries.
Implementation Method 1
A bipolar junction transistor design featuring both lateral and vertical conducting paths
Data Source
AI summary
A bipolar junction transistor is provided, including a semiconductor substrate and a doped layer of a first conductivity type, a doped well region of a second conductivity type formed in the doped layer, a first, second heavily doped region of the second conductivity type, and a third, fourth and fifth heavily doped region of the first conductivity type in the doped well region. The fifth heavily doped region is coupled with a first pin. The third and fourth heavily doped regions are coupled with a second pin. A sixth and seventh heavily doped region of the first conductivity type are disposed in the doped layer. The sixth and first heavily doped regions are connected in common. The seventh and second heavily doped regions are connected in common. When applying either a positive or negative surged mode, the bipolar junction transistor is formed, having both lateral and vertical conducting paths.