Black Phosphorous Single Channel Device with Electrostatic Doping

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Solution Overview

Problem

Conventional doping methods for black phosphorous (BP) are limited to non-degenerate doping levels, restricting the control of charge carriers and electrical properties, and require a gate voltage to operate, losing function when voltage is removed.

Innovation Solution

A black phosphorous-based electronic device with a single channel layer formed by doping ionic liquid onto a black phosphorous layer, creating a wide charge density range from non-degenerate to degenerate levels using electrostatic doping, and a method involving an ionic gel layer and gate electrode to generate an electric field, enabling P+-P, P+-N, and P+-N+ junctions with negative differential resistance.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If conventional doping methods are used on black phosphorous, then the doping process is simple, but the doping level is limited to non-degenerate range only

Engineering Contradiction:

Improvedoping process simplicityVSAvoiddoping level range

Core Design Contradiction:

Ease of manufactureVSAdaptability or versatility

Solution Approach 1:

The patent applies electrostatic gating to change the electrical parameters of black phosphorous, enabling continuous control of carrier concentration from non-degenerate to degenerate doping levels. By adjusting gate voltage, the system achieves wide-range doping control without changing the physical structure or material composition.

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent replaces conventional chemical doping methods with electrostatic doping using electric fields. This substitution allows precise control of carrier concentration through voltage application, achieving both simplicity and wide-range adaptability in doping levels.

Inventive Principle:

Principle #28Mechanics substitution (Replace mechanical system)

2Adaptability or versatility

If electrostatic gating is used for doping, then the doping level can be controlled widely from non-degenerate to degenerate range, but the device loses function when gate voltage is removed

Engineering Contradiction:

Improvedoping level control rangeVSAvoiddevice function stability

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The patent applies electrostatic doping in advance to establish the desired carrier concentration and electrical properties before device operation. This preliminary action ensures stable device function without requiring continuous gate voltage application during operation.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

The patent uses the black phosphorous material's inherent properties to maintain doping effects after gate voltage removal. The material self-maintains the achieved electrical characteristics, making the device self-sufficient and eliminating dependency on continuous external voltage.

Inventive Principle:

Principle #25Self-service

3Ease of operation

If surface adsorbed doping is used, then the doping effect is controllable, but it is limited to low doping regime only

Engineering Contradiction:

Improvedoping effect controllabilityVSAvoiddoping regime range

Core Design Contradiction:

Ease of operationVSAdaptability or versatility

Solution Approach 1:

The patent changes the fundamental parameter of doping control from surface adsorption concentration to electrostatic field strength. This enables continuous adjustment of carrier concentration across the full range from non-degenerate to degenerate doping, overcoming the low-doping limitation while maintaining ease of operation.

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution allows for the control of electrical properties between semiconductor and conductor properties, achieving a uniform horizontal junction structure and various functionalities, overcoming limitations of conventional devices and extending the application range of nano-sized electronic devices.

Implementation Method 1

a gate electrode for receiving a gate voltage to generate an electric field in the channel layer

Methodology Applied

Scientific EffectElectric field: Electric Field

Implementation Method 2

executing doping onto a black phosphorous layer using electrostatic doping stable in air to produce a wide charge density from a non-degenerate level to a degenerate level

Methodology Applied

Scientific EffectElectrostatic doping: Electrostatic Induction

Data Source

PatentUS10608095B2Electronic device based on black phosphorous single channel with multi-function and method of manufacturing the same

Publication Date: 2020.03.31 RES & BUSINESS FOUND SUNGKYUNKWAN UNIV

AI summary

The present disclosure provides a multi-functional electronic device with a black phosphorous-based single channel, wherein the device comprises: a black phosphorous-based single channel layer including a horizontal arrangement of a first semiconductor region and a second semiconductor region to define a horizontal junction therebetween, wherein the second semiconductor region has a lower hole-carrier density than the first semiconductor region; a first electrode connected to the first semiconductor region; a second electrode spaced from the first electrode and connected to the second semiconductor region; an ionic gel layer disposed on the first semiconductor region; and a gate electrode for receiving a gate voltage to generate an electric field in the channel layer.