Blanking Aperture Array High-Resistivity Film
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Solution Overview
Problem
The existing blanking aperture arrays in electron beam writing apparatuses face issues with electrostatic charging and electrical breakdown, leading to beam deflection and reduced drawing accuracy due to the exposure of insulating films to electron beams and scattered electrons, which can cause electrostatic breakdown and deviation in beam trajectories.
Innovation Solution
A blanking aperture array with a high-resistivity film covering the insulating film and ground electrodes, having an electric resistance higher than the ground electrodes but lower than the insulating film, is used to prevent electrical charging and short-circuiting, thereby maintaining beam control and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a passivation film (insulating film) is formed on the surface of the blanking aperture array to protect the MOSFET gate insulator, then the reliability of the control circuit is improved, but the surface becomes electrically charged when irradiated with electron beams, causing beam deflection and reducing manufacturing precision
Solution Approach 1:
The patent changes the electrical parameter (resistivity) of the surface film from insulating to conductive by replacing the silicon nitride passivation film with a conductive film such as ITO (indium tin oxide) or doped silicon. This parameter change allows the surface to remain protected while preventing electrostatic charge accumulation, thereby eliminating beam deflection and maintaining manufacturing precision.
Solution Approach 2:
The patent employs a composite structure where a conductive film is applied over the insulating passivation film, or uses a conductive semiconductor material instead of pure insulator. This composite approach combines the protective function of the insulating layer with the charge-dissipating property of the conductive layer, resolving the contradiction between protection and precision.
2Ease of manufacture
If the insulating film is exposed on the surface to maintain device structure, then the ease of manufacture is improved, but electrostatic breakdown occurs and beam courses are deflected, worsening reliability
Solution Approach 1:
The patent modifies the electrical parameter of the surface layer by introducing conductive materials (ITO, doped silicon) with resistivity values between 0.01-100 ohm·cm, transforming the surface from insulating to conductive. This allows standard MOSFET fabrication to be maintained while preventing electrostatic breakdown and ensuring reliable blanking control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration prevents electrostatic breakdown and beam deflection, ensuring precise beam control and improved drawing accuracy by allowing electrons to flow without accumulation, thus maintaining the integrity of the control circuit and beam trajectories.
Implementation Method 1
a high-resistivity film provided so as to cover the insulating film and at least part of the ground electrodes, the high-resistivity film having an electric resistance that is higher than an electric resistance of the ground electrodes and lower than an electric resistance of the insulating film
Implementation Method 2
the blanking electrodes and the ground electrodes configured to perform blanking deflection of the predetermined beam
Data Source
AI summary
In one embodiment, a blanking aperture array includes a substrate including an upper surface on which an insulating film is provided, a plurality of blanking aperture portions provided in the substrate, each of the plurality of blanking aperture portions including one of penetration holes, through which a predetermined beam passes, and one of blanking electrodes and one of ground electrodes which are provided on the insulating film, and the blanking electrodes and the ground electrodes configured to perform blanking deflection of the predetermined beam, and a high-resistivity film provided so as to cover the insulating film and at least part of the ground electrodes, the high-resistivity film having an electric resistance that is higher than an electric resistance of the ground electrodes and lower than an electric resistance of the insulating film.