BLC Pixel Optical Blocking Structure for Light Leakage Suppression

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Solution Overview

Problem

Existing semiconductor image sensors face challenges with light leakage in black level correction pixels, which compromises the accuracy of thermal background current measurement.

Innovation Solution

The implementation of optical blocking structures within the black level correction pixels, utilizing a composite light blocking material layer that includes a vertically alternating sequence of material layers with different refractive indices, and/or metal layers with specific reflectivity ranges, and/or an infrared blocking material layer to enhance light blocking capabilities.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If prior art light blocking materials are used in black level correction pixels, then the structure is simple and easy to manufacture, but light leakage occurs which compromises the accuracy of thermal background current measurement

Engineering Contradiction:
Improveaccuracy of thermal background current measurementVSAvoidstructure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent applies composite materials by using multiple alternating layers of materials with different refractive indices (e.g., silicon nitride and silicon oxide) to create an optical blocking structure. This composite structure enhances light blocking capability through constructive interference of reflected light waves at each interface, thereby suppressing light leakage and improving measurement precision in black level correction pixels.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent segments the light blocking function into multiple thin layers rather than using a single thick layer. Each layer is optimized for specific optical properties, and the alternating refractive indices create multiple reflection interfaces. This segmentation allows precise control over light blocking across different wavelengths while maintaining manufacturability through standard deposition processes.

Inventive Principle:
Principle #1Segmentation

2Reliability

If a single layer light blocking material is used, then the manufacturing process is simple, but light leakage occurs reducing black level correction accuracy

Engineering Contradiction:
Improveblack level correction accuracyVSAvoidmanufacturing process complexity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent uses composite materials with alternating high and low refractive index layers to achieve superior light blocking performance. The specific combination of materials (such as silicon nitride and silicon oxide) and their alternating structure creates optical interference that enhances blocking capability, improving reliability of black level correction while remaining compatible with standard semiconductor manufacturing processes.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent optimizes the thickness of each layer in the alternating structure to specific values that maximize light blocking through constructive interference. By carefully controlling the optical thickness parameters of each layer (typically quarter-wave thicknesses), the structure achieves enhanced light blocking performance across the relevant wavelength range, improving black level correction accuracy.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution effectively suppresses light penetration, thereby improving the accuracy of black level correction and enhancing the fidelity of image capture in semiconductor image sensors.

Implementation Method 1

a composite light blocking material layer that includes a vertically alternating sequence of material layers with different refractive indices

Methodology Applied
Scientific EffectOptical interference: Interference

Implementation Method 2

metal layers with specific reflectivity ranges

Methodology Applied
Scientific EffectReflection: Reflection

Implementation Method 3

an infrared blocking material layer to enhance light blocking capabilities

Methodology Applied
Scientific EffectAbsorption (EM radiation): Absorption (EM radiation)

Data Source

PatentUS12211869B2Optical blocking structures for black level correction pixels in an image sensor
Publication Date: 2025.01.28 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12211869B2 patent drawing
  • US12211869B2 patent drawing
  • US12211869B2 patent drawing

AI summary

An image sensor includes an array of image pixels and black level correction (BLC) pixels. Each BLC pixel includes a BLC pixel photodetector, a BLC pixel sensing circuit, and a BLC pixel optics assembly configured to block light that impinges onto the BLC pixel photodetector. Each BLC pixel optics assembly may include a first portion of a layer stack including a vertically alternating sequence of first material layers having a first refractive index and second material layers having a second refractive index. Additionally or alternatively, each BLC pixel optics assembly may include a first portion of a layer stack including at least two metal layers, each having a respective wavelength sub-range having a greater reflectivity than another metal layer. Alternatively or additionally, each BLC pixel optics assembly may include an infrared blocking material layer that provides a higher absorption coefficient than color filter materials within image pixel optics assemblies.