Block Copolymer Contact Hole Pattern Formation
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Solution Overview
Problem
Existing methods for forming contact hole patterns with block copolymers fail to achieve uniformity and circularity of hole diameters, as the selection of suitable block copolymers and control of phase-separated structures are not adequately addressed.
Innovation Solution
A method involving the formation of a block copolymer layer on a substrate with a thin film, followed by phase separation and selective removal of one block, where the hole diameter is between 0.8 to 3.1 times the period of the block copolymer, to achieve improved uniformity and circularity of the contact hole pattern.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a block copolymer is applied to form a phase-separated structure for contact hole pattern, then the hole diameter uniformity is improved, but the circularity varies largely as the hole diameter becomes smaller
Solution Approach 1:
The patent applies parameter changes by controlling the thickness ratio between the block copolymer layer and the thin film to be 70% or less, and by selecting block copolymers with specific periods (0.3 to 1.3 times the hole diameter). These parameter optimizations ensure that the phase-separated cylinder structure forms correctly within the hole, maintaining both diameter uniformity and circularity even as hole dimensions decrease.
Solution Approach 2:
The patent employs local quality by forming a cylinder structure through phase separation that is specifically positioned near the center of each hole. The selective removal of one phase creates a localized structural transformation that improves uniformity in the critical hole region while preserving the overall pattern integrity and circularity.
2Length of moving object
If the hole diameter is reduced for further miniaturization, then the integration density is improved, but the uniformity and circularity of hole diameter deteriorates
Solution Approach 1:
The patent utilizes self-service through self-assembly of block copolymers that spontaneously form phase-separated cylinder structures. This self-organizing mechanism naturally produces uniform cylindrical patterns scaled to the required hole dimensions, maintaining manufacturing precision even as hole diameters are reduced for further miniaturization and higher integration density.
Solution Approach 2:
The patent applies parameter changes by selecting block copolymer periods that are 0.3 to 1.3 times the hole diameter and controlling the block copolymer layer thickness to be 70% or less of the thin film thickness. These parameter optimizations ensure that the phase-separated structure forms correctly within smaller holes, maintaining uniformity and circularity despite reduced dimensions.
3Measurement precision
If a block copolymer layer is formed to control phase-separated pattern, then the position control is improved, but the layer thickness must be precisely controlled
Solution Approach 1:
The patent applies parameter changes by establishing a specific thickness ratio (70% or less) between the block copolymer layer and the thin film, and by selecting block copolymers with specific periods. These parameter specifications provide clear fabrication guidelines that simplify thickness control while maintaining position control accuracy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method reliably enhances the uniformity and circularity of the hole pattern by forming a phase-separated structure with a cylinder structure near the center of the hole, resulting in a smaller and more consistent hole diameter.
Implementation Method 1
a phase separation step in which, after the block copolymer layer forming step, the layer containing the block copolymer is subjected to phase separation
Implementation Method 2
it is necessary to form a self-organized nano structure by a microphase separation only in specific regions
Data Source
AI summary
A method of forming a contact hole pattern, including: a block copolymer layer forming step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate having on a surface thereof a thin film with a hole pattern formed, so as to cover the thin film; a phase separation step in which the layer containing the block copolymer is subjected to phase separation; a selective removing step in which phase of at least one block of the plurality of blocks constituting the block copolymer is removed, wherein hole diameter of the hole pattern formed on the thin film is 0.8 to 3.1 times period of the block copolymer, and in the layer forming step, thickness between upper face of the thin film and surface of the layer containing the block copolymer is 70% or less of thickness of the thin film.