Block Copolymer Phase Separation for Dense Nano-Patterns
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Solution Overview
Problem
Current methods for forming fine patterns in semiconductor devices face limitations due to image resolution limits of photolithography processes, and self-assembly techniques for overcoming these limitations are still in development, making it difficult to achieve high integration density.
Innovation Solution
A method involving the formation of preliminary mask patterns, guide elements, and a block co-polymer layer for phase-separation to create nano-scale structures, allowing for the fabrication of nano-scale structures with precise control over pattern density and size, overcoming photolithography resolution limits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography process is used to form fine patterns, then manufacturing process isๆ็ and reliable, but image resolution limits prevent formation of patterns smaller than wavelength limits
Solution Approach 1:
The patent segments the patterning process into multiple stages: first forming preliminary mask patterns with photolithography, then using self-assembly of block copolymer to create finer patterns within those constraints. This multi-stage segmentation allows achieving sub-wavelength resolution while maintaining process reliability.
Solution Approach 2:
The patent introduces guide elements as intermediary structures that mediate between the photolithography-defined preliminary masks and the final self-assembled patterns. These guide elements provide physical constraints that direct the self-assembly process to achieve desired nanoscale patterns.
2Manufacturing precision
If self-assembly technique is used to overcome resolution limits, then finer patterns can be formed, but process maturity and reliability are still in development
Solution Approach 1:
The patent performs preliminary actions by first forming the preliminary mask patterns and guide elements using mature photolithography processes before introducing the self-assembly step. This preliminary structuring creates a controlled environment that guides the self-assembly process, improving its reliability.
Solution Approach 2:
The patent applies different process qualities to different regions: using mature photolithography for preliminary masks and guide elements where reliability is critical, and self-assembly in the block copolymer layer where fine pattern formation is critical. This local differentiation optimizes both reliability and precision.
3Ease of manufacture
If uniform nano-scale structures are formed across entire substrate, then manufacturing simplicity is maintained, but inability to provide different densities for cell array regions versus peripheral circuits reduces adaptability
Solution Approach 1:
The patent applies local quality by forming different pattern densities in different regions: dense patterns in cell array regions and less dense patterns in peripheral circuit regions. The preliminary mask patterns and guide elements are configured to enable this regional differentiation while using a generally uniform self-assembly process.
Solution Approach 2:
The patent segments the substrate into different functional regions with different pattern density requirements. By configuring the preliminary masks and guide elements differently in cell array versus peripheral circuit regions, the process achieves regional adaptability while maintaining overall process simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of uniformly sized nano-scale structures with high integration density, suitable for various semiconductor devices, including DRAM, PcRAM, and SRAM, by leveraging phase-separation of block co-polymer domains to achieve patterns that are dense in cell array regions and less dense in peripheral circuits.
Implementation Method 1
phase-separating the block co-polymer layer to form first and second domains in the spaces between the first guide elements
Data Source
AI summary
Methods of fabricating nano-scale structures are provided. A method includes forming a first hard mask pattern corresponding to first openings in a dense region, forming first guide elements on the first hard mask pattern aligned with the first openings, and forming second hard mask patterns in a sparse region to provide isolated patterns. A blocking layer is formed in the sparse region to cover the second hard mask patterns. A first domain and second domains are formed in the dense region using a phase separation of a block co-polymer layer. Related nano-scale structures are also provided.