Block Copolymer Directed Self-Assembly for Mixed Pattern Formation
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Solution Overview
Problem
Conventional directed self-assembly (DSA) technology for semiconductor lithography can only form one type of pattern, such as line-and-space or hole patterns, making it difficult to achieve efficient pattern formation.
Innovation Solution
A pattern formation method involving a base structure with guide portions and a neutral portion, where a block copolymer film is treated to form phase-separation patterns, allowing for the creation of multiple pattern types, including trench and hole patterns, by controlling the affinity and heat treatment conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional DSA technology is used, then one type of pattern (line-and-space or hole pattern) can be formed, but multiple pattern types cannot be formed by a single process
Solution Approach 1:
The base structure is segmented into guide portions with different surface properties (hydrophilic and hydrophobic regions) that direct different polymer components to specific locations, enabling simultaneous formation of multiple pattern types in a single DSA process
Solution Approach 2:
Different regions of the base structure are given different local qualities (surface energy characteristics) to selectively attract specific polymer components, allowing line patterns, hole patterns, or other micropatterns to form in different areas according to the local surface properties
2Adaptability or versatility
If multiple DSA processes are used to form different pattern types, then pattern variety can be achieved, but process complexity increases
Solution Approach 1:
Multiple pattern formation capabilities are merged into a single DSA process by incorporating multiple guide portions with different surface properties in one base structure, eliminating the need for sequential DSA processes and reducing overall process complexity
Solution Approach 2:
The base structure is designed with multi-functionality, serving as both a pattern guide and a surface energy template simultaneously, enabling a single DSA process to achieve what previously required multiple specialized processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient formation of complex patterns, including microscopic line and hole patterns, enhancing the capability of DSA technology for semiconductor device manufacturing.
Implementation Method 1
performing a predetermined treatment for the block copolymer film, thereby forming first and second pattern portions formed of the first polymer on the first and second guide portions, forming third and fourth pattern portions formed of the second polymer on the neutral portion
Implementation Method 2
performing a predetermined treatment for the block copolymer film
Implementation Method 3
each including a pinning portion having a higher affinity for a first polymer than for a second polymer
Data Source
AI summary
According to one embodiment, a pattern formation method includes forming a base structure including first and second guide portions each including a pinning portion, and a neutral portion, forming a block copolymer film containing first and second polymers on the bass structure, performing a predetermined treatment for the block copolymer film, thereby forming first and second pattern portions formed of the first polymer, forming third and fourth pattern portions formed of the second polymer, and forming a fifth pattern portion formed of the first and second polymers. The fifth pattern portion includes a plurality of first portions formed of the second polymer, and a second portion formed of the first polymer and provided on the neutral portion and the first portions.