Block Copolymer Directed Self-Assembly Defect Reduction
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Solution Overview
Problem
Conventional directed self-assembly pattern forming methods using block copolymers struggle to produce fine patterns with minimal defects, as the regular array structures formed are not sufficiently defect-free, limiting their application in microfabrication for electronic devices.
Innovation Solution
A composition comprising a block copolymer with a first block containing a silicon atom and a second block without silicon, along with a monovalent group that forms a compound with a logP value of at least 2.4, which facilitates the formation of a directed self-assembling film with fewer defects and finer pitches through phase separation, enabling the creation of patterns with favorable shapes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional block copolymer composition is used, then directed self-assembling film with fine pitches can be formed, but the regular array structure contains insufficiently inhibited defects
Solution Approach 1:
The invention changes the chemical composition parameters of the block copolymer by introducing a silicon-containing repeating unit into one of the blocks, which modifies the phase separation behavior and self-assembly characteristics to reduce defects while maintaining fine pitch capability
Solution Approach 2:
The invention creates a composite block copolymer structure combining silicon-containing units with conventional polymer units, leveraging the unique properties of silicon atoms to improve the regularity and reduce defects in the self-assembled film structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution effectively forms directed self-assembling films with regular array structures and fewer defects, suitable for advanced microfabrication in semiconductor and liquid crystal devices, enhancing pattern quality and reducing defects in microfabrication processes.
Implementation Method 1
a block copolymer that forms a phase separation structure by directed self-assembly
Implementation Method 2
forms a phase separation structure by directed self-assembly
Data Source
AI summary
A pattern-forming method includes forming on one face side of a substrate, a directed self-assembling film, and removing a part of the directed self-assembling film. The directed self-assembling film is formed from a composition including a block copolymer and a solvent. The block copolymer includes a first block composed of a first repeating unit that includes a silicon atom, a second block composed of a second repeating unit that does not include a silicon atom, and a first group that bonds to at least one end of a main chain and links to the first block. The first group is a monovalent group that forms a compound having ClogP of no less than 2.4 provided that a methyl group is bonded to an atom on a side of the main chain. The first group does not comprise a hetero atom.