Block Copolymer Line Patterns on Faceted Substrates

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Solution Overview

Problem

Current methods fail to achieve long-range translational order of nanoscopic line patterns over macroscopic areas using block copolymers, with shearing being the only cost-effective method but limited by film thickness and defects.

Innovation Solution

A method involving the formation of block copolymer films on substrates with parallel facets, followed by annealing to create linear microdomains parallel to the substrate surface and orthogonal to the facets, utilizing faceted surfaces to align cylindrical microdomains and achieve high order parameters over large areas.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If shearing is used to produce nanoscopic line patterns over large areas, then productivity and cost-effectiveness are improved, but manufacturing precision deteriorates due to defects and limited film thickness

Engineering Contradiction:
Improverate of pattern formationVSAvoidlong-range translational order
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The invention changes the substrate surface parameters by creating faceted surfaces with specific geometries (ridges and valleys) that promote ordered block copolymer self-assembly. By controlling the facet pitch and geometry, the method achieves both high productivity and improved manufacturing precision through thermally-driven reconfiguration of polymer microdomains on the faceted surface

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention replaces mechanical shearing with a thermal field to achieve pattern formation. By applying heat to anneal the block copolymer film on the faceted substrate, the system uses thermal energy to drive the self-assembly process, eliminating the need for mechanical shear forces and associated defects while maintaining high productivity

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If block copolymer self-assembly is used to generate nanostructured materials, then manufacturing precision is improved, but productivity deteriorates due to the complexity of achieving long-range order over macroscopic areas

Engineering Contradiction:
Improvelong-range lateral orderingVSAvoidscale of pattern formation
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The faceted substrate serves multiple functions simultaneously: it provides long-range translational order through its periodic facet structure, enables macroscopic area coverage, and guides the orientation of block copolymer microdomains. This multi-functionality resolves the contradiction by making the substrate itself the patterning tool, eliminating the need for separate lithographic steps

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The block copolymer system performs self-assembly on the faceted substrate without requiring external lithographic equipment or complex processing steps. The thermodynamic driving forces of the polymer self-assembly process, combined with the guiding effect of the facet geometry, enable the system to create ordered patterns autonomously over large areas, significantly improving productivity

Inventive Principle:
Principle #25Self-service

3Manufacturing precision

If faceted substrate surfaces are used to align block copolymer microdomains, then manufacturing precision is improved through high order parameters, but device complexity increases due to substrate preparation requirements

Engineering Contradiction:
Improveorder parameterVSAvoidsubstrate preparation process
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The faceted substrate is prepared in advance with the desired ridge and valley geometry before block copolymer film deposition. This preliminary creation of the ordering template allows the subsequent self-assembly process to proceed directly to high-order patterns without requiring in-process adjustments or complex alignment procedures, effectively managing device complexity

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach produces highly aligned and ordered line patterns with an order parameter of at least 0.95 over macroscopic areas, suppressing short and long wavelength waviness, and is suitable for industrial processes like roll-to-roll and nanoimprint lithography.

Implementation Method 1

annealing the block copolymer film to form an annealed block copolymer film comprising linear microdomains parallel to the substrate surface and orthogonal to the parallel facets

Methodology Applied
Scientific EffectAnnealing: Annealing

Implementation Method 2

the directed self-assembly of block copolymers (BCPs), a highly parallel process, offers a simple, robust, and rapid route for generating nanostructured materials

Methodology Applied
Scientific EffectSelf-assembly: Self-Assembly

Data Source

PatentUS9718094B2Method of forming oriented block copolymer line patterns, block copolymer line patterns formed thereby, and their use to form patterned articles
Publication Date: 2017.08.01 UNIST (ULSAN NAT INST OF SCI & TECH)
  • US9718094B2 patent drawing
  • US9718094B2 patent drawing
  • US9718094B2 patent drawing

AI summary

A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.