Block Copolymer Self-Assembly for Fine Pitch Patterning
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Solution Overview
Problem
The increasing integration density and performance requirements of semiconductor devices pose challenges in forming patterns with high precision and uniformity, particularly in achieving fine pitches without deviations in photolithography processes.
Innovation Solution
A method involving the formation of a block copolymer layer on a substrate with guide and dummy guides, where the block copolymer is phase-separated to create self-assembled domains, allowing for precise patterning by etching, and the use of a brush liner to ensure uniform coating and prevent incline planes in the block copolymer layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photolithography process is used for pattern formation, then manufacturing process is simple, but manufacturing precision deteriorates at fine pitches
Solution Approach 1:
The pattern formation process is segmented into multiple stages: first forming guide patterns with photolithography, then using these guides to direct block copolymer self-assembly for final fine-pitch pattern formation. This segmentation allows each stage to operate at its optimal capability level.
Solution Approach 2:
Guide patterns serve as intermediary structures that mediate between the photolithography process and the block copolymer self-assembly process. The guides provide a template that directs the self-assembly of block copolymers to form the final fine-pitch patterns.
2Productivity
If integration density is increased, then device performance is improved, but pattern uniformity deteriorates
Solution Approach 1:
The block copolymer system performs self-service through self-directed self-assembly. The block copolymers automatically organize into uniform fine-pitch patterns guided by the larger-scale guide structures, eliminating the need for external intervention to achieve uniformity at the nanoscale.
Solution Approach 2:
The invention changes the characteristic parameter of pattern formation from direct photolithographic exposure to self-directed self-assembly of block copolymers. This parameter change enables achievement of finer pitch dimensions with maintained uniformity, as the self-assembly process naturally produces consistent spacing.
3Area of moving object
If feature size is decreased, then integration density is improved, but manufacturing precision deteriorates
Solution Approach 1:
The invention transitions from two-dimensional photolithographic patterning to a combination of 2D guide patterns and 3D block copolymer self-assembly. The block copolymers form vertically oriented cylindrical domains that provide precise lateral positioning, effectively adding a vertical dimension to the patterning process to achieve finer lateral features.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of uniform, high-density patterns with fine pitches, improving the resolution and accuracy of semiconductor device manufacturing beyond traditional photolithography limits, enhancing the integration density and performance of semiconductor devices.
Implementation Method 1
phase-separating the block copolymer layer to form a self-assembled layer including a plurality of first domains regularly arranged along with the plurality of guides in the first region
Implementation Method 2
forming a brush liner before forming the block copolymer layer, the brush liner covering the plurality of dummy guides and the feature layer
Data Source
AI summary
A method of forming a pattern, the method including forming a mask layer on a feature layer on a substrate; forming guides regularly arranged with a first pitch on the mask layer in a first region and dummy guides regularly arranged with the first pitch on the mask layer in a second region spaced apart from the first region with a separation region therebetween, the separation region having a width greater than the first pitch; forming a block copolymer layer on the mask layer; phase-separating the block copolymer layer to form a self-assembled layer; forming a mask pattern by etching the mask layer using the self-assembled layer; and patterning the feature layer by transferring a shape of the mask pattern to the feature layer in the first region while blocking the shape of the mask pattern from being transferred to the feature layer in the second region.