Self-Assembled Block Copolymer Films for Nanoscale Patterning

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Solution Overview

Problem

Current methods for fabricating nanoscale devices and components, such as optical lithographic processing, are inadequate for producing complex layouts and structures at the nanometer level, and existing techniques like electron beam or EUV photolithography are costly and inefficient for achieving high resolution.

Innovation Solution

The use of graphoepitaxy techniques with self-assembling diblock copolymers, where trench topography and chemically differentiated trench floors control the orientation of cylindrical domains, allowing for the formation of perpendicular and parallel cylinders, enabling the creation of complex patterns and structures at the nanoscale.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If optical lithographic processing methods are used, then manufacturing cost is low, but manufacturing precision deteriorates and cannot accommodate fabrication of structures at the nanometer level

Engineering Contradiction:
Improvenanometer-level fabrication precisionVSAvoidmanufacturing cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent introduces self-assembling block copolymer films as an intermediary material between conventional lithography and the final nanoscale structure. The copolymers self-assemble into periodic patterns with domain sizes of 5-50 nm, serving as a mediator that translates larger-scale lithographic patterns into nanoscale features, thereby achieving high precision without requiring expensive nanoscale lithography equipment

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent utilizes parameter changes in the block copolymer system, specifically controlling the molecular weight and volume fraction of the polymer blocks to achieve desired domain sizes and morphologies. By adjusting these parameters, the self-assembly process produces consistent nanoscale patterns with high precision, resolving the contradiction between achieving nanometer-level precision and maintaining low manufacturing cost

Inventive Principle:
Principle #35Parameter changes

2Manufacturing precision

If electron beam or EUV photolithography is used, then manufacturing precision improves to achieve comparable resolution, but manufacturing cost increases and productivity decreases

Engineering Contradiction:
Improvenanometer-level fabrication precisionVSAvoidprocessing efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The block copolymer system performs self-service through spontaneous self-assembly into periodic structures. After deposition and annealing, the copolymers automatically organize into ordered domains without requiring complex real-time control or iterative processing, significantly improving productivity compared to electron beam or EUV lithography which require slow, sequential patterning

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The patent employs preliminary action by pre-synthesizing block copolymers with specific molecular weights and compositions that are designed to self-assemble into desired nanoscale patterns. This preliminary preparation allows the self-assembly process to proceed efficiently without requiring complex in-situ control during fabrication, thereby maintaining high productivity while achieving nanometer-level precision

Inventive Principle:
Principle #10Preliminary action

3Adaptability or versatility

If simple trench structures are used, then ease of manufacture improves, but adaptability deteriorates and complex layouts cannot be formed

Engineering Contradiction:
Improvecomplex pattern formation capabilityVSAvoidtrench structure complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent applies local quality by chemically differentiating specific regions of the substrate, such as creating neutral wetting areas versus preferential wetting areas in different trench regions. This allows different block copolymer orientations (perpendicular vs. parallel cylinders) to form in different locations, enabling complex layouts including contacts, conductive lines, and capacitors without requiring complex overall trench structures

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for the cost-effective production of ordered nanoscale structures, exceeding the resolution capabilities of conventional photolithography and reducing processing steps, while maintaining efficiency and precision comparable to advanced lithographic methods.

Implementation Method 1

Diblock copolymer films spontaneously assembly into periodic structures by microphase separation of the constituent polymer blocks after annealing, for example, by thermal annealing above the glass transition temperature of the polymer

Methodology Applied
Scientific EffectThermal annealing: Annealing

Implementation Method 2

The use of self-assembling diblock copolymers presents another route to patterning at nanometer dimensions. Diblock copolymer films spontaneously assembly into periodic structures by microphase separation

Methodology Applied
Scientific EffectSelf-assembly: Self-Assembly

Implementation Method 3

Researchers have demonstrated the ability to chemically differentiate a surface such that some areas are preferentially wetting to one domain of a block copolymer and other areas are neutral wetting to both blocks

Methodology Applied
Scientific EffectWetting: Wetting

Data Source

PatentUS9257256B2Templates including self-assembled block copolymer films
Publication Date: 2016.02.09 MICRON TECHNOLOGY INC
  • US9257256B2 patent drawing
  • US9257256B2 patent drawing
  • US9257256B2 patent drawing

AI summary

Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.