Block Co-Polymer Fine Pattern Structures for Semiconductor Fabrication
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Solution Overview
Problem
Existing methods for fabricating nano-sized structures often result in undesired random patterns in certain regions, which can interfere with the formation of precise patterns in semiconductor devices, such as memory and logic devices, due to the transfer of non-ordered block co-polymer (BCP) structures into underlying layers.
Innovation Solution
The implementation of a fine pattern structure that includes distinct regions for pattern formation and non-pattern regions, utilizing a lower hard mask layer, upper hard mask patterns, neutralization patterns, and block co-polymer layers to prevent the transfer of unwanted patterns into the underlying layer, ensuring precise pattern formation in semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If block co-polymer materials are used for pattern formation, then self-assembly and pattern formation capability are improved, but non-ordered random patterns are generated in certain regions
Solution Approach 1:
The patent applies local quality by creating distinct regions with different properties: a first region containing guide patterns that direct BCP self-assembly into ordered structures, and a second region without guide patterns where random BCP patterns are suppressed by a different hard mask configuration. This allows the same BCP material to produce different pattern qualities in different locations.
Solution Approach 2:
The patent segments the substrate into multiple regions with different hard mask layer configurations. The first region has a lower hard mask layer with exposed portions for BCP attachment, while the second region has a different hard mask structure that prevents BCP pattern transfer. This segmentation enables selective pattern formation in specific areas.
2Manufacturing precision
If additional processes are performed to prevent non-ordered patterns, then pattern integrity is improved, but fabrication complexity increases
Solution Approach 1:
The patent implements preliminary action by pre-forming hard mask layer structures with different configurations in different regions before BCP deposition. The lower hard mask layer is patterned with exposed portions in the first region and covered portions in the second region, creating region-specific conditions that guide subsequent BCP self-assembly behavior without requiring additional post-BCP processes.
Solution Approach 2:
The hard mask layer serves as an intermediary that mediates between the BCP material and the underlying substrate. By configuring the hard mask layer differently in different regions (exposed vs. covered portions), it controls where BCP patterns form and prevents random pattern transfer to the substrate, eliminating the need for additional protective processes.
3Ease of manufacture
If non-ordered BCP structures are transferred into underlying layers, then fabrication process is simplified, but pattern precision deteriorates
Solution Approach 1:
The patent uses local quality by creating region-specific hard mask structures: the lower hard mask layer has exposed portions in the first region that allow controlled BCP pattern transfer, while the second region has covered portions that prevent BCP structure transfer. This enables the process to maintain simplicity while achieving high pattern precision in the first region.
Solution Approach 2:
The patent extracts the harmful non-ordered BCP structures from the first region by using the lower hard mask layer's exposed portions to guide BCP assembly into ordered patterns, while the second region's covered portions extract or remove the possibility of random pattern formation by preventing BCP attachment and subsequent transfer to the underlying substrate.
Data Source
AI summary
A fine pattern structure includes a lower hard mask layer on a pattern formation layer having a first region and a second region, first upper hard mask patterns disposed on the lower hard mask layer in the first region to expose portions of the lower hard mask layer, a second upper hard mask pattern covering the lower hard mask layer in the second region, guide patterns on the first and second upper hard mask patterns, neutralization patterns on the exposed portions of the lower hard mask layer in the first region, a first block co-polymer layer covering the guide patterns in the first region and the neutralization patterns, and a second block co-polymer layer covering the guide pattern in the second region.