Self-Organizing Block Copolymer Masks for Sub-10nm Lithography
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Solution Overview
Problem
Current lithography techniques face challenges in achieving high resolution for small feature sizes in integrated circuit fabrication, particularly due to limitations in wavelength and the complexity and cost of advanced technologies like X-ray and EUV lithography.
Innovation Solution
The use of self-organizing block copolymers, which form masks by segregating into alternating regions, allowing for the formation of small, closely-spaced features without the need for expensive high-resolution lithography systems, by depositing a copolymer film and augmenting its height with supplemental copolymers to create a thicker mask for effective pattern transfer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography techniques are used to pattern features, then the manufacturing process is simple and cost-effective, but the resolution is insufficient for small feature sizes below 10 nm
Solution Approach 1:
The patent segments the patterning process into two distinct stages: first forming guide features using conventional lithography, then using self-organizing block copolymers to generate the final fine-pitch pattern. This segmentation allows each stage to operate at its optimal capability level, with conventional lithography handling the guide features and the self-organizing polymers handling the sub-10 nm pattern formation, thereby achieving high resolution without requiring complex short-wavelength lithography systems
Solution Approach 2:
The block copolymer system performs self-organization to automatically generate the desired pattern without requiring complex external control or additional lithography equipment. The copolymers spontaneously segregate into alternating domains guided by the previously formed features, creating the final pattern through self-directed assembly rather than external forcing, which simplifies the overall manufacturing system
2Manufacturing precision
If X-ray or EUV lithography is used to achieve high resolution for small features, then the manufacturing precision improves, but the device complexity and cost increase significantly
Solution Approach 1:
The patent uses block copolymer materials that can be easily deposited, self-organized, and removed in a single-use manner. These copolymer masks are formed through simple deposition and annealing processes, then used to transfer the pattern, and finally removed without requiring complex retrieval or reuse mechanisms. This disposable approach to patterning materials avoids the need for expensive, complex lithography systems while achieving the desired resolution
3Reliability
If a thick initial mask is used for pattern transfer, then the pattern transfer reliability improves, but the manufacturing precision of the initial features deteriorates due to lithography resolution limits
Solution Approach 1:
The patent transitions from relying solely on lateral dimensions for pattern definition to utilizing the vertical dimension through self-assembled block copolymer structures. The copolymers form vertically extended micellar structures that provide the necessary mask thickness for reliable pattern transfer, while the lateral pattern definition is achieved through the self-organization process guided by thinner, more precisely formed guide features
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the reliable formation of features with critical dimensions as small as 1-100 nm, facilitating the use of conventional lithography techniques and improving pattern quality by minimizing the need for thick initial masks, thus overcoming the limitations of traditional methods.
Implementation Method 1
The use of self-organizing block copolymers, which form masks by segregating into alternating regions
Implementation Method 2
by depositing a copolymer film and augmenting its height with supplemental copolymers to create a thicker mask
Data Source
AI summary
A mask having features formed by self-organizing material, such as diblock copolymers, is formed on a partially fabricated integrated circuit. A copolymer template, or seed layer, is formed on the surface of the partially fabricated integrated circuit. To form the seed layer, diblock copolymers, composed of two immiscible blocks, are deposited in the space between copolymer alignment guides. The copolymers self-organize, with the guides guiding the self-organization and with each block aggregating with other blocks of the same type, thereby forming the seed layer. Supplemental diblock copolymers are deposited over the seed layer. The copolymers in the seed layer guide self-organization of the supplemental copolymers, thereby vertically extending the pattern formed by the copolymers in the seed layer. Block species are subsequently selectively removed to form a pattern of voids defined by the remaining block species, which form a mask that can be used to pattern an underlying substrate.