Block Copolymer Metal Oxide Patterning for Semiconductor Nanostructures
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Solution Overview
Problem
Conventional lithographic processes are expensive and inefficient for fabricating nanostructures with feature sizes less than 50 nm, and self-assembled block copolymers lack etch selectivity, making it difficult to achieve high-density circuits and complex device fabrication.
Innovation Solution
Selective permeation of metal oxides into self-assembled block copolymers to form metal oxide structures, which are then used to pattern semiconductor structures, enhancing etch selectivity and enabling the formation of nano-scale features through controlled phase separation and annealing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithographic processes are used to fabricate nanostructures with feature sizes less than 50 nm, then manufacturing precision is improved, but device complexity and cost increase significantly
Solution Approach 1:
The block copolymer system performs self-assembly to automatically form periodic nanostructures with dimensions below 50 nm. The copolymer blocks spontaneously organize into ordered domains through microphase separation, eliminating the need for complex external lithographic tools and processes while achieving the required manufacturing precision
Solution Approach 2:
The patent changes the physical and chemical parameters of the copolymer system by incorporating metal oxides into the block copolymer structure. This modification alters the etch selectivity parameter, enabling the self-assembled domains to exhibit differential etch resistance and allowing selective removal of specific domains to create the desired nanostructure pattern
2Device complexity
If self-assembled block copolymers are used for patterning, then device complexity is reduced, but etch selectivity is insufficient
Solution Approach 1:
The patent creates a composite material by incorporating metal oxide components into the block copolymer structure. This composite block copolymer combines the self-assembly capability of the polymer with the etch selectivity of the metal oxide, allowing the material to simultaneously provide simple patterning through self-assembly and reliable etch selectivity during subsequent processing steps
Solution Approach 2:
The metal oxide incorporation creates local quality differences within the block copolymer domains. Different blocks of the copolymer contain different metal oxide compositions or concentrations, giving each domain distinct etch selectivity properties. This enables selective etching of specific domains while preserving others, solving the etch selectivity problem while maintaining the simplicity of the self-assembly approach
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the cost-effective fabrication of high-density semiconductor structures with improved etch selectivity, enabling the creation of complex devices with feature sizes below 50 nm, overcoming the limitations of conventional lithographic techniques.
Implementation Method 1
Selective permeation of metal oxides into self-assembled block copolymers to form metal oxide structures
Implementation Method 2
Block copolymers are known to form nano-scale microdomains by microphase separation. When cast on a substrate and annealed, block copolymers form nano-scale periodic patterns
Implementation Method 3
When cast on a substrate and annealed, block copolymers form nano-scale periodic patterns
Data Source
AI summary
Methods of forming metal oxide structures and methods of forming metal oxide patterns on a substrate using a block copolymer system formulated for self-assembly. A block copolymer at least within a trench in the substrate and including at least one soluble block and at least one insoluble block may be annealed to form a self-assembled pattern including a plurality of repeating units of the at least one soluble block laterally aligned with the trench and positioned within a matrix of the at least one insoluble block. The self-assembled pattern may be exposed to a metal oxide precursor that impregnates the at least one soluble block. The metal oxide precursor may be oxidized to form a metal oxide. The self-assembled pattern may be removed to form a pattern of metal oxide lines on the substrate surface. Semiconductor device structures are also described.