Block Copolymer Patterning via Selective Metal Coupling
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Solution Overview
Problem
The challenge in integrated circuit fabrication is to form high-density repeating patterns using block copolymers as patterned masks, as existing methods face difficulties in selectively removing one subunit relative to the other and transferring patterns into underlying materials due to their similar chemical nature.
Innovation Solution
The approach involves selectively coupling metal to one domain of the block copolymer, using it as a mask during patterning, and employing specific etch chemistries to differentiate between the subunits, allowing for the formation of patterned masks and subsequent transfer of patterns into the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If block copolymer is used to form high-density repeating patterns, then pattern density increases, but selective removal of subunits becomes difficult due to similar chemical nature
Solution Approach 1:
Metal nanoparticles serve as intermediaries that selectively bind to one subunit of the block copolymer, enabling differentiation between chemically similar subunits. The metal particles act as a mediator that introduces chemical contrast, allowing subsequent selective etching processes to distinguish and remove specific subunits while leaving others intact, thus resolving the selectivity problem while maintaining high pattern density
Solution Approach 2:
The invention changes the chemical parameters of the block copolymer system by introducing metal nanoparticles with specific binding affinities. This parameter change creates differential chemical reactivity between the two subunits, transforming a system where selective removal was difficult into one where selective etching becomes feasible through the introduced chemical contrast
2Manufacturing precision
If conventional etch chemistries are used on block copolymer masks, then pattern transfer occurs, but etch resistance is insufficient leading to poor pattern fidelity
Solution Approach 1:
The invention creates a composite mask structure combining block copolymer with metal nanoparticles. This composite material exhibits enhanced etch resistance compared to pure block copolymer, while maintaining the self-assembled high-density pattern structure. The metal component provides additional chemical stability and etch resistance, enabling faithful pattern transfer to the underlying substrate
3Quantity of substance
If block copolymer masks are used for pattern transfer, then high-density patterns are formed, but difficulties arise in transferring patterns into underlying materials
Solution Approach 1:
Metal nanoparticles serve as intermediaries that not only enable selective subunit identification but also enhance the overall reliability of pattern transfer. The metal component provides structural stability and chemical resistance during the etching process, ensuring that the high-density pattern structure is faithfully transferred to the underlying material without degradation or distortion
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the creation of high-density patterns with improved etch resistance and selective pattern transfer, overcoming the limitations of conventional etch chemistries and enhancing integrated circuit density.
Implementation Method 1
selectively coupling metal to one domain of the block copolymer
Implementation Method 2
employing specific etch chemistries to differentiate between the subunits
Data Source
AI summary
Some embodiments include methods of forming patterns in substrates by utilizing block copolymer assemblies as patterning materials. A block copolymer assembly may be formed over a substrate, with the assembly having first and second subunits arranged in a pattern of two or more domains. Metal may be selectively coupled to the first subunits relative to the second subunits to form a pattern of metal-containing regions and non-metal-containing regions. At least some of the block copolymer may be removed to form a patterned mask corresponding to the metal-containing regions. A pattern defined by the patterned mask may be transferred into the substrate with one or more etches. In some embodiments, the patterning may be utilized to form integrated circuitry, such as, for example, gatelines.