Block Copolymer Nano-Structure Formation on Large Substrates
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Solution Overview
Problem
Existing methods for forming nano-structures using block copolymers in thin films often result in non-uniform arrangements on large substrates due to interactions with the substrate, limiting the formation of stable and uniform nano-structures.
Innovation Solution
A method involving the formation of a photoresist pattern on a base substrate, followed by the creation of a sacrifice structure and subsequent oxidation of a neutral layer using a block copolymer, allowing for the removal of sacrifice blocks and the formation of a chemical pattern, which enables the growth of nano-structures from a second block copolymer thin film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods (electric field, epitaxial self-assembly, graphoepitaxy) are used to control arrangement or orientation of nano-structure in thin film, then the nano-structure arrangement can be controlled, but uniform nano-structure formation on large-sized substrate is barely achieved
Solution Approach 1:
The patent introduces patterned sacrificial layers that divide the large substrate into smaller regions, each with controlled nano-structure formation. The sacrificial layers are formed in a segmented pattern that guides block copolymer self-assembly locally, ensuring uniformity across the entire large substrate by repeating this controlled segmentation throughout the area.
2Ease of manufacture
If block copolymer self-assembly is used to form nano-structure, then nano-structure formation is achieved, but the arrangement differs from desired arrangement due to interaction with substrate
Solution Approach 1:
The patent introduces patterned sacrificial layers as intermediary elements between the substrate and the block copolymer. These sacrificial layers mediate the interaction by providing a controlled interface that directs block copolymer self-assembly into the desired arrangement, preventing direct unwanted interaction between the block copolymer and the substrate while maintaining ease of formation.
3Area of stationary object
If existing methods are used to form nano-structure on large substrate, then coverage area is increased, but uniformity and stability of nano-structure is reduced
Solution Approach 1:
The patent performs preliminary patterning of sacrificial layers before introducing the block copolymer. This preliminary action creates predetermined regions that guide subsequent self-assembly, ensuring that when the substrate is covered with nano-structures, each region maintains uniformity and stability according to the pre-established pattern, rather than forming randomly across the large area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of uniform nano-structures on large substrates with improved productivity and manufacturing reliability, facilitating the creation of patterns such as linear grids for polarization plates.
Implementation Method 1
The neutral layer is oxidized by using the second sacrifice block as a mask to form a chemical pattern
Implementation Method 2
the block copolymer forms a nano-structure through self-assembling
Data Source
AI summary
According to an example embodiment of the present invention, a photoresist pattern is formed on a base substrate including a neutral layer. A sacrifice structure including a first sacrifice block and a second sacrifice block is formed on the base substrate having the photoresist pattern, and the sacrifice structure is formed from a first thin film including a first block copolymer. Thus, a chemical pattern is formed to form a nano-structure. Therefore, the nano-structure may be easily formed on a substrate having a large size by using a block copolymer, and productivity and manufacturing reliability may be improved.