Block Copolymer Composition for Nanoscale Patterning
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Solution Overview
Problem
Current block copolymers face challenges in controlling the lateral placement and long-range ordering of microdomains during self-assembly, particularly in patterning substrates with features smaller than 50 nm, and exhibit inadequate etch resistance for subsequent processing steps.
Innovation Solution
A copolymer composition comprising a block copolymer with a poly(acrylate) block and a poly(silyl acrylate) block, along with an antioxidant, which allows for improved annealing with low defect formation and conversion of the poly(silyl acrylate) domains to an etch-resistant species, enabling the formation of periodic nanostructures in the 20-40 nm range.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If block copolymer self-assembly is used for nanoscale patterning, then feature size reduction below optical lithography limits is achieved, but control over lateral placement and long-range ordering of microdomains deteriorates
Solution Approach 1:
The patent introduces a substrate prepattern as an intermediary element that mediates between the block copolymer self-assembly process and the final pattern. The prepattern provides topographic guidance that directs the lateral placement and long-range ordering of microdomains, solving the control problem while maintaining sub-45 nm feature sizes. The prepattern acts as a template that the block copolymer follows during self-assembly.
2Length of moving object
If block copolymer self-assembly is used for nanoscale patterning, then feature size reduction below optical lithography limits is achieved, but control over long-range ordering of microdomains deteriorates
Solution Approach 1:
The substrate prepattern serves as a mediator that imposes long-range order on the block copolymer microdomains. The periodic topographic features of the prepattern guide the self-assembly process to produce uniformly spaced microdomains over large areas, achieving both small feature sizes and excellent long-range ordering.
3Stability of the object's composition
If conventional block copolymer composition is used, then self-assembly into microdomains is achieved, but etch resistance for subsequent processing steps is insufficient
Solution Approach 1:
The patent modifies the chemical composition parameters of the block copolymer by incorporating blocks with different etch resistances. Specifically, one block is designed to be etch-resistant while the other is etch-sensitive, enabling selective removal processes. This parameter change in composition allows the material to maintain self-assembly capability while gaining differential etch resistance for subsequent processing.
4Length of moving object
If block copolymer patterning is used, then sub-45 nm features are formed, but defect formation increases during annealing
Solution Approach 1:
The patent optimizes the molecular weight and composition parameters of the block copolymer to reduce defect formation during annealing. By carefully selecting the molecular weights of the etch-resistant and etch-sensitive blocks, and optimizing the overall composition, the patent achieves reliable self-assembly with minimal defects while maintaining sub-45 nm feature sizes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The copolymer composition achieves precise control over microdomain orientation and etch resistance, facilitating the formation of high-resolution nanostructures with reduced defect formation and enhanced processing capabilities.
Implementation Method 1
Some block copolymers, consisting of two or more distinct homopolymers joined end to end, are known self-assemble into periodic micro domains having typical dimensions of 10 nanometers to 50 nanometers (nm).
Implementation Method 2
converting the poly(silyl acrylate) domains in the annealed film to SiOx
Implementation Method 3
annealing the film, leaving a pattern of poly(acrylate) domains and poly(silyl acrylate) domains
Data Source
AI summary
A copolymer composition is provided including a block copolymer having a poly(acrylate) block and a poly(silyl acrylate) block; wherein the block copolymer exhibits a number average molecular weight, MN, of 1 to 1,000 kg/mol; and, wherein the block copolymer exhibits a polydispersity, PD, of 1 to 2. Also provided are substrates treated with the copolymer composition.