Block Copolymer Self-Assembly for Nanoscale Pattern Uniformity
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Solution Overview
Problem
As semiconductor devices become more integrated, the challenge of forming fine patterns at nanoscale dimensions with uniform critical dimensions (CD) in photolithography processes becomes increasingly difficult, requiring new methods to improve pattern uniformity and resolution beyond traditional limits.
Innovation Solution
A method involving the formation of pillar-shaped guides with a block copolymer layer, where a major block affinity liner and neutral liner are used to phase separate the block copolymer, allowing for the creation of regularly arranged domains that serve as etch masks to form fine hole patterns at precise pitches, overcoming the limitations of traditional photolithography.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional photolithography is used to form patterns, then the manufacturing process is simple and well-established, but the resolution and pattern uniformity deteriorate at nanoscale dimensions below the resolution limit
Solution Approach 1:
The patent segments the patterning process into multiple steps: forming pillar-shaped guides, depositing block copolymer layer, phase separation to create domains, selective removal of first domains, and final etching. This segmentation allows achieving sub-lithography resolution by combining multiple simpler steps rather than relying on a single high-resolution lithography step.
Solution Approach 2:
The patent performs preliminary actions by first forming pillar-shaped guides and then depositing the block copolymer layer before phase separation. The major block affinity liner is deposited in advance to control the self-assembly process, ensuring that the block copolymer phase separates into the desired pattern configuration before the final etching step.
2Area of moving object
If the critical dimension is reduced to nanoscale range to increase integration density, then the area of unit cell decreases and integration increases, but the CD uniformity and pattern quality deteriorate
Solution Approach 1:
The patent employs self-service by utilizing the self-assembling and phase separation properties of the block copolymer layer. The block copolymer automatically organizes into domains with uniform spacing through thermodynamic self-organization, eliminating the need for external alignment processes and achieving consistent CD uniformity at nanoscale dimensions without manual intervention.
Solution Approach 2:
The patent changes physical parameters by controlling the phase separation temperature, annealing conditions, and block copolymer composition to achieve desired domain spacing and CD uniformity. By adjusting these parameters, the system transitions from a lithography-limited process to a thermodynamically-controlled self-assembly process that achieves superior CD uniformity at reduced dimensions.
3Productivity
If fine patterns are formed at pitches below photolithography resolution limit, then the integration density increases, but the pattern formation becomes difficult and unreliable
Solution Approach 1:
The patent introduces an intermediary block copolymer layer that mediates between the lithography step and the final pattern transfer. The block copolymer acts as a self-assembling intermediary that converts the low-resolution lithography pattern into high-resolution fine patterns through phase separation, enabling reliable pattern formation at pitches below the photolithography resolution limit.
Solution Approach 2:
The patent uses composite materials by combining the major block affinity liner material with the block copolymer layer having different polymer blocks. This composite structure leverages the complementary properties of each material: the liner provides surface control and the block copolymer provides self-assembling capability, together achieving reliable fine pattern formation that neither material could achieve alone.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of highly integrated semiconductor devices by achieving precise, uniform pattern formation at fine pitches, enhancing the resolution and uniformity of patterns beyond the conventional photolithography limits, suitable for manufacturing advanced semiconductor devices.
Implementation Method 1
phase separates the block copolymer layer and forms a plurality of first domains that includes the first polymer block and are regularly arranged along with the plurality of pillar-shaped guides and a second domain that includes the second polymer block
Implementation Method 2
self-assembling the plurality of first domains so as to be spaced apart from the plurality of pillar-shaped guides with the major block affinity liner and the second domain therebetween
Implementation Method 3
attaching the polymer having the second repeating unit to the surfaces of the plurality of pillar-shaped guides by heat-treating the polymer composition coated on the surfaces of the plurality of pillar-shaped guides
Data Source
AI summary
The present inventive concept provides a method of forming a fine pattern including forming a plurality of pillar-shaped guides that are regularly arranged on a feature layer.