Block Copolymer Nanostructuring for High-Resolution Lithography
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Solution Overview
Problem
Current block copolymer films, such as PS-b-PMMA, face limitations in achieving nano-domains smaller than 10 nm due to low Flory-Huggins interaction parameters, which hinder high-resolution nano-lithography, and modifying these copolymers to increase this parameter while maintaining rapid organization kinetics is challenging.
Innovation Solution
A process involving the incorporation of co-monomers into the block copolymer structure to modify the Flory-Huggins interaction parameter χN, allowing for the formation of nano-domains smaller than 10 nm with rapid organization kinetics, by adjusting the chemical formula and polymerization techniques to achieve the desired range of χN values.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the Flory-Huggins interaction parameter χN is increased to achieve smaller nano-domains (below 10 nm), then the resolution for nano-lithography is improved, but the organization kinetics of the block copolymer slows down
Solution Approach 1:
The patent modifies the chemical composition parameters of the block copolymer by incorporating co-monomers (such as 1,1-diphenylethylene in the polystyrene block and methacrylate in the PMMA block) to precisely tune the Flory-Huggins interaction parameter χN to the optimal range of 7-500, enabling simultaneous achievement of small nano-domain sizes and rapid organization kinetics
Solution Approach 2:
The invention creates a composite block copolymer structure by integrating co-monomers into the existing PS-b-PMMA framework, forming a multi-component system where the co-monomers modify the interaction parameters without compromising the overall self-assembly capability and organization speed
2Manufacturing precision
If co-monomers are incorporated to modify the Flory-Huggins interaction parameter, then nano-domain size is reduced, but the chemical formula complexity and synthesis difficulty increase
Solution Approach 1:
The patent applies local modification by incorporating co-monomers at specific positions within the block copolymer chains (e.g., 1,1-diphenylethylene units within the polystyrene block), allowing precise control of local interaction parameters while maintaining the overall simplicity of the block copolymer architecture
3Manufacturing precision
If the Flory-Huggins interaction parameter χN is increased below 10, then high-resolution nano-lithography is enabled, but the glass transition temperature and other key properties may be compromised
Solution Approach 1:
The patent carefully selects co-monomers with appropriate glass transition temperatures and chemical structures (1,1-diphenylethylene for PS block, methacrylate for PMMA block) that modify the χN parameter while maintaining or preserving the thermal properties and mechanical strength of the original block copolymer system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The modified block copolymer films achieve nano-domains of sizes as small as 1-10 nm with organization kinetics comparable to unmodified PS-b-PMMA, enabling high-resolution nano-lithography while preserving key properties like glass transition temperature and UV depolymerization.
Implementation Method 1
structure the arrangement of the constituent blocks of the copolymers by phase segregation between blocks thereby forming nano-domains
Implementation Method 2
self-nanostructuring capability
Implementation Method 3
heat treatment applied to the block copolymer to allow self-organisation thereof i.e. to obtain phase separation of the domains, orientation of the domains and a reduction in the number of defects
Data Source
AI summary
The invention relates to a block copolymer film nanostructured in nanodomains at a predetermined temperature, obtained from a basic block copolymer which is nonstructured at said predetermined temperature, and at least one block of which comprises styrene and at least another block of which comprises methyl methacrylate. The block copolymer film is useful for forming nano-lithography masks.