Block Copolymer Composition for Pattern Shape Retention
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Solution Overview
Problem
Current methods for forming patterns using phase-separated structures of block copolymers struggle to achieve uniformity and shape retention for non-circular contact hole patterns, leading to variations in hole diameter and shape as the pattern size decreases.
Innovation Solution
A composition comprising a block copolymer with a specific etching selectivity and a compatible polymer is used to form a phase-separated structure, where the block copolymer layer is applied to a substrate with a pattern, subjected to phase separation, and the non-selective phases are selectively removed, allowing the remaining phase to reflect the original pattern shape and size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a block copolymer is applied to form a phase-separated structure for pattern reduction, then the hole diameter uniformity improves, but the shape distortion increases for non-circular patterns
Solution Approach 1:
The patent changes the chemical composition parameters by introducing a compatibilizer polymer that is incompatible with block PA but compatible with block PB. This parameter change modifies the phase separation behavior to maintain both circularity and shape fidelity during pattern reduction
Solution Approach 2:
The compatibilizer polymer acts as an intermediary substance between block PA and block PB. It mediates the phase separation process by preferentially interacting with block PB, thereby controlling the morphology evolution to preserve the original pattern shape while achieving uniform reduced dimensions
2Shape
If the block copolymer layer is made thinner to achieve better pattern fidelity, then the shape retention improves, but the phase separation completeness deteriorates
Solution Approach 1:
The patent changes the chemical interaction parameters by adding the compatibilizer polymer, which enhances the thermodynamic driving force for phase separation. This allows thinner film layers to achieve complete phase separation while maintaining shape fidelity, as the compatibilizer promotes clearer phase boundaries even in constrained thin geometries
3Device complexity
If a conventional block copolymer system is used without additional polymers, then the process complexity remains low, but the etching selectivity decreases
Solution Approach 1:
The patent creates a composite material system combining block copolymer (with incompatible blocks PA and PB) and a compatibilizer polymer. This composite composition achieves high etching selectivity because the compatibilizer preferentially associates with block PB, creating distinct phase identities that enhance selective removal of block PB while preserving block PA structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of patterns with improved uniformity and shape retention, regardless of the original pattern shape, by selectively removing phases other than the block PA, resulting in a reduced pattern that accurately reflects the original shape and size.
Implementation Method 1
a layer containing a block copolymer is formed on a substrate having a thin film with a pattern formed on a surface thereof using the composition according to the first aspect, so as to cover the bottom of concave portions of the pattern; separating a phase such that the layer containing the block copolymer is subjected to phase separation
Implementation Method 2
a component (A) being a block copolymer including a block PA bonded to one, or two or more blocks incompatible with the block PA and whose etching selectivity to the block PA is greater than one; selectively removing a phase of blocks other than the block PA within the layer constituting the block copolymer
Data Source
AI summary
The present invention relates to a composition including: a component (A) being a block copolymer including a block PA bonded to one, or two or more blocks incompatible with the block PA and whose etching selectivity to the block PA is greater than one; and a component (B) being at least one polymer selected from the group consisting of a random copolymer and a homopolymer, wherein the polymer of the component (B) is compatible with at least one block other than the block PA within the blocks constituting the block copolymer of the component (A), and is incompatible with the block PA.