Block Copolymer Pattern Formation via Solvent-Assisted Self-Assembly
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional methods for forming high-density repeating patterns using block copolymers often result in defects, which hinder the advancement of integrated circuit fabrication and density increase.
Innovation Solution
A combination of thermal treatment and solvent treatment is employed to tailor the effective Flory-Huggins interaction parameter, allowing for self-assembly of block copolymers at high temperatures with minimal solvent use, followed by rapid quenching to lock the pattern and minimize defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If block copolymer is used to form high-density repeating patterns, then pattern density is improved, but defect rate increases
Solution Approach 1:
The patent applies parameter changes by systematically adjusting temperature, solvent concentration, and processing time during block copolymer self-assembly. By optimizing these parameters, the method achieves high-density patterns while minimizing defects, directly resolving the contradiction between pattern density and defect rate
Solution Approach 2:
The patent utilizes phase transitions of block copolymers during self-assembly processes. By controlling the phase behavior through temperature and solvent adjustments, the method enables formation of ordered high-density patterns with reduced defects, addressing both the pattern density improvement and defect rate reduction
2Ease of manufacture
If conventional block copolymer methods are used, then self-assembly occurs, but defect specifications exceed 0.3 defects per square centimeter
Solution Approach 1:
The patent introduces solvent as an intermediary substance that mediates the self-assembly process of block copolymers. By carefully controlling solvent concentration and type, the method enables self-assembly to proceed while achieving defect specifications below 0.3 defects per square centimeter, simultaneously maintaining ease of manufacture and improving manufacturing precision
3Productivity
If high temperature processing is used with minimal solvent, then self-assembly is enhanced, but rapid quenching is required to lock the pattern
Solution Approach 1:
The patent employs periodic action through a controlled sequence of thermal and solvent treatments followed by rapid quenching. This periodic process cycle enhances self-assembly efficiency during the treatment phase, then rapidly locks the pattern during quenching, achieving high productivity while managing process complexity through systematic timing control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of high-density patterns with significantly reduced defects, suitable for advanced integrated circuitry applications, achieving defect specifications below 0.3 defects per square centimeter.
Implementation Method 1
A combination of thermal treatment and solvent treatment is employed to tailor the effective Flory-Huggins interaction parameter, allowing for self-assembly of block copolymers
Implementation Method 2
A combination of thermal treatment and solvent treatment is employed to tailor the effective Flory-Huggins interaction parameter
Implementation Method 3
followed by rapid quenching to lock the pattern and minimize defects
Data Source
AI summary
Some embodiments include methods of forming patterns. A block copolymer film may be formed over a substrate, with the block copolymer having an intrinsic glass transition temperature (Tg,0) and a degradation temperature (Td). A temperature window may be defined to correspond to temperatures (T) within the range of Tg,0≦T≦Td. While the block copolymer is in the upper half of the temperature window, solvent may be dispersed into the block copolymer to a process volume fraction that induces self-assembly of the block copolymer into a pattern. A defect specification may be defined, and the process volume fraction of solvent may be at level that achieves self-assembly within the defect specification. In some embodiments, the solvent may be removed from within the block copolymer while maintaining the defect specification.