Self-Assembled Block Copolymer Patterning for Large-Area Nanoscale Structures
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Solution Overview
Problem
Self-assembling block copolymers used in semiconductor fabrication are limited by their finite effective range, making it difficult to form self-aligned nanoscale structures exceeding 1 micron in size, which is a constraint for large repetitive patterns required in advanced semiconductor and nanoscale devices.
Innovation Solution
The method involves dividing a large area into hexagonal or rectangular tiles, each with self-assembling block copolymers applied and patterned within openings in a template layer, with subsequent template layers and copolymer applications to extend the self-aligned pattern beyond the inherent range of the block copolymers, using non-photosensitive polymeric resist to form nanoscale structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If self-assembling block copolymers are used to form nanoscale structures, then nanoscale patterning capability is achieved, but the structure size is limited to less than 1 micron due to finite effective range
Solution Approach 1:
The patent divides the large area into multiple smaller regions, each patterned separately using self-assembling block copolymers within their effective range. These segmented patterns are then combined through multiple lithographic and self-assembly cycles to form a large-scale coherent pattern, effectively overcoming the finite effective range limitation.
Solution Approach 2:
The patent extends the patterning process from a single layer to multiple layers, using vertical stacking of template layers and self-assembled structures. This multi-layer approach allows the effective range to be extended in the vertical dimension while achieving large horizontal coverage through sequential processing.
2Area of stationary object
If multiple template layers are used to extend pattern area, then large area coverage is achieved, but process complexity increases
Solution Approach 1:
The patent employs periodic repetition of the lithography and self-assembly cycle across multiple template layers. Each layer undergoes the same sequence of steps (coat, bake, develop, anneal), creating a rhythmic, standardized process that, while repeated, maintains consistency and reduces operational complexity through pattern recognition and automation.
Solution Approach 2:
The patent designs the template layers and self-assembling block copolymers to serve multiple functions: they provide both the structural template for alignment and the self-organizing medium for pattern formation. This multi-functionality reduces the number of separate components and processes needed, thereby reducing overall complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the creation of contiguous nanoscale self-assembled self-aligned structures over a wide area, overcoming the size limitations of self-assembling block copolymers, allowing for larger, coherent patterns suitable for advanced semiconductor devices.
Implementation Method 1
Self-assembling copolymer materials that are capable of self-organizing into nanometer-scale patterns may be applied within a recessed region of a template layer to form a nanoscale structure. Under suitable conditions, the two or more immiscible polymeric block components separate into two or more different phases on a nanometer scale, and thereby form ordered patterns of isolated nano-sized structural units.
Implementation Method 2
The self-assembling block copolymers are annealed at an elevated temperature to form two sets of polymer block structures containing two different polymeric block components.
Data Source
AI summary
In one embodiment, Hexagonal tiles encompassing a large are divided into three groups, each containing ⅓ of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group are formed in a template layer, and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self-aligned line and space structures are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order.