Block Copolymer Phase Separation for Lithography Pattern Miniaturization
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Solution Overview
Problem
Current microfabrication methods for electronic devices face challenges in achieving precise miniaturization of patterns with minimal placement errors and residues, particularly in forming fine patterns with uniformity and accuracy.
Innovation Solution
A pattern-forming method involving the formation of a base pattern with recessed portions on a substrate, filled with a composition containing a block copolymer and solvent, followed by phase separation and selective removal of phases to create a miniaturized pattern, which is then used as a mask for etching, ensuring precise and uniform pattern formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography methods are used for miniaturization, then existing manufacturing processes can be maintained, but placement errors and residues increase, reducing pattern uniformity and precision
Solution Approach 1:
The patent applies segmentation by dividing the pattern formation process into multiple stages: first forming a base pattern, then using block copolymer phase separation to create miniaturized patterns within the base pattern structures. This multi-stage approach enables precise pattern formation with reduced placement errors compared to single-step lithography methods.
Solution Approach 2:
The patent employs preliminary action by pre-forming a base pattern structure before introducing the block copolymer composition. The base pattern serves as a pre-established framework that guides subsequent phase separation, ensuring accurate pattern placement and reducing errors that would occur with direct single-step patterning.
2Manufacturing precision
If conventional lithography methods are used, then existing equipment can be utilized, but residues remain on the substrate, degrading pattern quality
Solution Approach 1:
The patent utilizes phase transitions of block copolymers, where the copolymer undergoes phase separation from a homogeneous state to distinct microphase-separated structures. This phase transition mechanism enables clean pattern formation without residues, as the phase-separated structures can be selectively removed or retained to form precise patterns.
Solution Approach 2:
The block copolymer system performs self-service through self-assembly and directed self-assembly processes. The copolymer automatically organizes into ordered phase-separated structures based on its molecular architecture and interactions with the base pattern, eliminating the need for complex additional processing steps that could introduce residues.
3Manufacturing precision
If block copolymer phase separation is used for miniaturization, then pattern uniformity improves, but process complexity increases due to multiple steps
Solution Approach 1:
The patent merges multiple functions into integrated process steps. For example, the base pattern formation and block copolymer application are combined in a sequential manner where the base pattern serves dual purposes as both a structural element and a template for phase separation. This merging reduces the number of separate processing equipment interventions needed.
Solution Approach 2:
The base pattern structure serves multiple functions: it acts as a mechanical support layer, a geometric template for phase separation, and a defining element for final pattern geometry. This multi-functionality eliminates the need for separate dedicated structures for each function, simplifying the overall process despite the advanced patterning capability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces placement errors and residues, enabling the formation of patterns with improved shape and size uniformity, suitable for advanced lithography processes in semiconductor and liquid crystal devices.
Implementation Method 1
Phase separation of the filler layer is allowed to form a plurality of phases of the filler layer
Data Source
AI summary
A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate directly or via other layer. The recessed portions of the base pattern are filled with a first composition to form a filler layer. Phase separation of the filler layer is allowed to form a plurality of phases of the filler layer. A part of the plurality of phases of the filler layer is removed to form a miniaturized pattern. The forming of the base pattern includes: forming a resist pattern on the front face side of the substrate; forming a layer of a second polymer on lateral faces of the resist pattern; and forming a layer of a third polymer that differs from the second polymer on a surface of the substrate or on a surface of the other layer.